Datasheet > IPDQ65R060CFD7

IPDQ65R060CFD7

更新时间： 2024-02-21 15:53:50

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
14页	1252K
描述
Infineon’s?650 V CoolMOS? CFD7?superjunction MOSFET IPDQ65R060CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as?server,?telecom,?solar, and?EV-charging stations, in which it enables significant efficiency improvements compared to competition.? As a successor to the?CFD2 SJ MOSFET?family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

IPDQ65R060CFD7 数据手册

650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice

IPDQ65R060CFD7

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics

Values

Typ.

1.0

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Diode forward voltage

Reverse recovery time

V_SD

t_rr

V_GS=0V,ꢀI_F=16.4A,ꢀT_j=25°C

V_R=400V,ꢀI_F=16.4A,ꢀdi_F/dt=100A/µs;

see table 8

141

0.86

9.8

212

1.72

V_R=400V,ꢀI_F=16.4A,ꢀdi_F/dt=100A/µs;

see table 8

Reverse recovery charge

Q_rr

I_rrm

µC

V_R=400V,ꢀI_F=16.4A,ꢀdi_F/dt=100A/µs;

see table 8

Peak reverse recovery current

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-08-29

1...3 4 567 8 9...14

下载PDF

型号	品牌	描述	获取价格	数据表
IPDQ65R060CFD7A	INFINEON	The 60m? IPDQ65R060CFD7A in QDPAK top side cooling SMD package is part of the automotive-q	获取价格
IPDQ65R080CFD7	INFINEON	Infineon’s?650 V CoolMOS? CFD7?superjunction	获取价格
IPDQ65R080CFD7A	INFINEON	The 80m? IPDQ65R080CFD7A in QDPAK top side cooling SMD package is part of the automotive-q	获取价格
IPDQ65R099CFD7	INFINEON	Infineon’s?650 V CoolMOS? CFD7?superjunction	获取价格
IPDQ65R099CFD7A	INFINEON	The 99m? IPDQ65R099CFD7A in QDPAK top side cooling SMD package is part of the automotive-q	获取价格
IPDQ65R125CFD7	INFINEON	Infineon’s?650 V CoolMOS? CFD7?superjunction	获取价格