650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice
IPDQ65R029CFD7A
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
For applications with applied blocking voltage > 425 V, it is required that the customer evaluates the impact of
cosmic radiation effect in early design phase and contacts the Infineon sales office for the necessary technical
support by Infineon.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
650
3.5
Typ.
Max.
-
Drain-source breakdown voltage
Gate threshold voltage1)
V(BR)DSS
V(GS)th
-
V
V
VGS=0V,ꢀID=1mA
4
4.5
VDS=VGS,ꢀID=1.79mA
-
-
-
1
-
VDS=650V,ꢀVGS=0V,ꢀTj=25°C
VDS=650V,ꢀVGS=0V,ꢀTj=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IDSS
µA
µA
Ω
160
IGSS
-
-
0.1
VGS=20V,ꢀVDS=0V
-
-
0.024 0.029
0.053
VGS=10V,ꢀID=35.8A,ꢀTj=25°C
VGS=10V,ꢀID=35.8A,ꢀTj=150°C
RDS(on)
RG
-
-
3.8
-
Ω
f=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
7149
106
Max.
Input capacitance
Output capacitance
Ciss
-
-
-
-
pF
pF
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
VGS=0V,ꢀVDS=400V,ꢀf=250kHz
Coss
Effective output capacitance, energy
related2)
Co(er)
Co(tr)
td(on)
tr
-
-
-
-
-
-
261
2774
54
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
VGS=0V,ꢀVDS=0...400V
Effective output capacitance, time
related3)
ID=constant,ꢀVGS=0V,ꢀVDS=0...400V
VDD=400V,ꢀVGS=13V,ꢀID=35.8A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
VDD=400V,ꢀVGS=13V,ꢀID=35.8A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
13
VDD=400V,ꢀVGS=13V,ꢀID=35.8A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
td(off)
tf
159
3
VDD=400V,ꢀVGS=13V,ꢀID=35.8A,
RG=1.8Ω;ꢀseeꢀtableꢀ9
1) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of
potential “linear mode”, please contact Infineon sales office.
2)ꢀCo(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
3)ꢀCo(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀCossꢀwhileꢀVDSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-12-14