Datasheet > IPDQ65R029CFD7A

IPDQ65R029CFD7A

更新时间： 2024-04-09 19:03:19

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
14页	1433K
描述
The 29m? IPDQ65R029CFD7A in QDPAK top side cooling SMD package is part of the automotive-qualified

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IPDQ65R029CFD7A 数据手册

650VꢀCoolMOSªꢀCFD7AꢀSJꢀPowerꢀDevice

IPDQ65R029CFD7A

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

I_AS

304

358

7.3

120

T_C=25°C

Avalanche energy, single pulse

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=7.3A; V_DD=50V; see table 10

dv/dt

V_GS

V_GS,pulse

P_tot

V/ns V_DS=0...400V

-20

-30

static;

f_repetition<=100kHz, t_pulse<= 2ns

463

150

n.a.

°C

T_C=25°C

Storage temperature

T_stg

T_j

-55

-40

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

304

T_C=25°C

V_DS=0...400V,ꢀI_SD<=35.8A,ꢀT_j=25°Cꢀꢀ

Reverse diode dv/dt³⁾

dv/dt

di_F/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=35.8A,ꢀT_j=25°Cꢀꢀ

Maximum diode commutation speed

1300 A/µs

see table 8

¹⁾Limited by T_{j max}

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-12-14

1 234 5 6 7...14

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