是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 2.29 |
雪崩能效等级(Eas): | 56 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏源导通电阻: | 0.18 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 53 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPA60R190C6 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |
![]() |
IPA60R190C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, M |
![]() |
IPA60R190E6 | INFINEON |
获取价格 |
600V CoolMOS E6 Power Transistor |
![]() |
IPA60R190P6 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |
![]() |
IPA60R190P6_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |
![]() |
IPA60R190P6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
![]() |
IPA60R199CP | INFINEON |
获取价格 |
CoolMOS Power Transistor |
![]() |
IPA60R199CP_08 | INFINEON |
获取价格 |
CoolMos Power Transistor |
![]() |
IPA60R199CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
IPA60R1K0CE | ISC |
获取价格 |
Isc N-Channel MOSFET Transistor |
![]() |