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IPA60R280P7 PDF预览

IPA60R280P7

更新时间: 2024-11-06 14:54:27
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
14页 1105K
描述
600V CoolMOS? P7?超结 (SJ) MOSFET 是600V CoolMOS? P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS? 平台具有同类中较为出色的R?onxA 和固有低栅极电荷 (Q?G),确保高效率。

IPA60R280P7 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:2.18峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IPA60R280P7 数据手册

 浏览型号IPA60R280P7的Datasheet PDF文件第2页浏览型号IPA60R280P7的Datasheet PDF文件第3页浏览型号IPA60R280P7的Datasheet PDF文件第4页浏览型号IPA60R280P7的Datasheet PDF文件第5页浏览型号IPA60R280P7的Datasheet PDF文件第6页浏览型号IPA60R280P7的Datasheet PDF文件第7页 
IPA60R280P7  
MOSFET  
PG-TOꢀ220ꢀFP  
600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice  
TheꢀCoolMOS™ꢀ7thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor  
highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction  
(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V  
CoolMOS™ꢀP7ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀP6ꢀseries.ꢀIt  
combinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellentꢀease  
ofꢀuse,ꢀe.g.ꢀveryꢀlowꢀringingꢀtendency,ꢀoutstandingꢀrobustnessꢀofꢀbody  
diodeꢀagainstꢀhardꢀcommutationꢀandꢀexcellentꢀESDꢀcapability.  
Furthermore,ꢀextremelyꢀlowꢀswitchingꢀandꢀconductionꢀlossesꢀmake  
switchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompactꢀandꢀmuch  
cooler.  
Features  
Drain  
Pin 2  
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀLLC)ꢀdueꢀtoꢀanꢀoutstanding  
ꢀꢁcommutationꢀruggedness  
•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses  
•ꢀExcellentꢀESDꢀrobustnessꢀ>2kVꢀ(HBM)ꢀforꢀallꢀproducts  
•ꢀBetterꢀRDS(on)/packageꢀproductsꢀcomparedꢀtoꢀcompetitionꢀenabledꢀbyꢀa  
ꢀꢁlowꢀRDS(on)*Aꢀ(belowꢀ1Ohm*mm²)  
*1  
Gate  
Pin 1  
*2  
Source  
Pin 3  
*1: Internal body diode  
*2: Integrated ESD diode  
Benefits  
•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage  
ꢀꢁacrossꢀPFCꢀandꢀPWMꢀstages  
•ꢀSimplifiedꢀthermalꢀmanagementꢀdueꢀtoꢀlowꢀswitchingꢀandꢀconduction  
ꢀꢁlosses  
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith  
ꢀꢁsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀtoꢀ>2ꢀkVꢀESD  
ꢀꢁprotection  
•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges  
Potentialꢀapplications  
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages  
forꢀe.g.ꢀꢀꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom  
andꢀUPS.  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
280  
18  
Unit  
V
m  
nC  
A
Qg,typ  
ID,pulse  
36  
Eoss @ 400V  
Body diode diF/dt  
2.1  
µJ  
900  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
PG-TO 220 FullPAK  
Marking  
RelatedꢀLinks  
IPA60R280P7  
60R280P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2020-01-30  

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