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IPA60R299CP PDF预览

IPA60R299CP

更新时间: 2024-11-05 03:44:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 265K
描述
CoolMOS Power Transistor

IPA60R299CP 数据手册

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IPA60R299CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ Tj,max  
R DS(on),max  
Q g,typ  
V
650  
0.299  
22  
V
• Lowest figure-of-merit RONxQg  
• Ultra low gate charge  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO220-3-31  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is specially designed for:  
• Hard switching SMPS topologies  
Type  
Package  
Ordering Code  
Marking  
6R299P  
IPA60R299CP  
PG-TO220-3-31  
SP000096438  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
11  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current2)  
I D  
T C=25 °C  
A
7
T C=100 °C  
Pulsed drain current3)  
34  
I D,pulse  
E AS  
T C=25 °C  
I D=4.4 A, V DD=50 V  
Avalanche energy, single pulse  
290  
mJ  
A
3),4)  
3),4)  
E AR  
I AR  
I D=4.4 A, V DD=50 V  
0.44  
4.4  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
V
DS=0...480 V  
50  
±20  
MOSFET dv /dt ruggedness  
dv /dt  
V/ns  
V
V GS  
Gate source voltage  
static  
±30  
AC (f >1 Hz)  
T C=25 °C  
P tot  
33  
Power dissipation  
W
T j, T stg  
-55 ... 150  
50  
Operating and storage temperature  
Mounting torque  
°C  
M2.5 screws  
page 1  
Ncm  
Rev. 1.3  
2005-12-22  

IPA60R299CP 替代型号

型号 品牌 替代类型 描述 数据表
TK12A60W TOSHIBA

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