Datasheet > IPA60R099P7XKSA1

IPA60R099P7XKSA1

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1186K
描述
Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

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IPA60R099P7XKSA1 数据手册

IPA60R099P7

MOSFET

PG-TOꢀ220ꢀFP

600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor

TheꢀCoolMOS™ꢀ7thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor

highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction

(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V

CoolMOS™ꢀP7ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀP6ꢀseries.ꢀIt

combinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellentꢀease

ofꢀuse,ꢀe.g.ꢀveryꢀlowꢀringingꢀtendency,ꢀoutstandingꢀrobustnessꢀofꢀbody

diodeꢀagainstꢀhardꢀcommutationꢀandꢀexcellentꢀESDꢀcapability.

Furthermore,ꢀextremelyꢀlowꢀswitchingꢀandꢀconductionꢀlossesꢀmake

switchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompactꢀandꢀmuch

cooler.

Features

Drain

Pin 2, Tab

•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀLLC)ꢀdueꢀtoꢀanꢀoutstanding

ꢀꢁcommutationꢀruggedness

•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses

•ꢀExcellentꢀESDꢀrobustnessꢀ>2kVꢀ(HBM)ꢀforꢀallꢀproducts

•ꢀBetterꢀR_DS(on)/packageꢀproductsꢀcomparedꢀtoꢀcompetitionꢀenabledꢀbyꢀa

ꢀꢁlowꢀR_DS(on)*Aꢀ(belowꢀ1Ohm*mm²)

Gate

Pin 1

Source

Pin 3

•ꢀLargeꢀportfolioꢀwithꢀgranularꢀRDS(on)ꢀselectionꢀqualifiedꢀforꢀaꢀvarietyꢀof

ꢀꢁindustrialꢀandꢀconsumerꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDEC

ꢀꢁ(J-STD20ꢀandꢀJESD22)

Benefits

•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage

ꢀꢁacrossꢀPFCꢀandꢀPWMꢀstages

•ꢀSimplifiedꢀthermalꢀmanagementꢀdueꢀtoꢀlowꢀswitchingꢀandꢀconduction

ꢀꢁlosses

•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith

ꢀꢁsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀtoꢀ>2ꢀkVꢀESD

ꢀꢁprotection

•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges

Applications

PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages

forꢀe.g.ꢀꢀꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom

andꢀUPS.

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g.typ

Value

650

Unit

mΩ

I_D,pulse

100

5.0

E_oss@400V

Body diode di/dt

µJ

900

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

PG-TO 220 FullPAK

Marking

RelatedꢀLinks

IPA60R099P7

60R099P7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2017-05-18

12 3 4 5 6 7...14

中文翻译

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与IPA60R099P7XKSA1相关器件

型号	品牌	获取价格	描述	数据表
IPA60R120C7	INFINEON	获取价格	600V CoolMOS? C7 超级结（SJ）MOSFET 系列比 CoolMOS? C
IPA60R120P7	INFINEON	获取价格	600V CoolMOS? P7?超结 (SJ) MOSFET 是600V CoolMOS
IPA60R120P7XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPA60R125C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPA60R125C6XKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IPA60R125CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPA60R125CP	INFINEON	获取价格	CoolMOS Power Transistor
IPA60R125CP_07	INFINEON	获取价格	CoolMos Power Transistor
IPA60R125CPXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
IPA60R125P6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor

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