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IPA60R170CFD7 PDF预览

IPA60R170CFD7

更新时间: 2023-12-06 20:13:07
品牌 Logo 应用领域
英飞凌 - INFINEON 高压二极管栅极
页数 文件大小 规格书
14页 1126K
描述
600V CoolMOS? CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术,补全了 CoolMOS? 7 系列。 该 CoolMOS? CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外,其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多,且具有市场上最短的反向恢复时间(trr)。

IPA60R170CFD7 数据手册

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IPA60R170CFD7  
MOSFET  
PG-TOꢀ220ꢀFP  
600VꢀCoolMOSªꢀCFD7ꢀPowerꢀDevice  
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower  
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand  
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe  
successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform  
tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge  
(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Qg),ꢀbest-in-class  
reverseꢀrecoveryꢀchargeꢀ(Qrr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™  
CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s  
fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof  
aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation  
robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in  
process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand  
reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity  
solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching  
topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.  
Drain  
Pin 2  
*1  
Gate  
Pin 1  
Features  
•ꢀUltra-fastꢀbodyꢀdiode  
Source  
Pin 3  
*1: Internal body diode  
•ꢀLowꢀgateꢀcharge  
•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdiF/dtꢀruggedness  
•ꢀLowestꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss  
•ꢀBest-in-classꢀRDS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀruggedness  
•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies  
•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
Potentialꢀapplications  
SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies  
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,  
Telecom,ꢀEVꢀCharging  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
650  
170  
28  
Unit  
V
m  
nC  
A
Qg,typ  
ID,pulse  
51  
Eoss @ 400V  
Body diode diF/dt  
3.2  
µJ  
1300  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
IPA60R170CFD7  
Package  
PG-TO 220 FullPAK  
Marking  
RelatedꢀLinks  
60R170F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2020-01-30  

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