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IM820B-1ETFO-50.0000MHZ PDF预览

IM820B-1ETFO-50.0000MHZ

更新时间: 2024-09-20 17:14:11
品牌 Logo 应用领域
ILSI 机械石英晶振振荡器
页数 文件大小 规格书
9页 788K
描述
XO, Clock,

IM820B-1ETFO-50.0000MHZ 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.67
其他特性:ALSO COMPATIBLE WITH HCMOS O/P; TR, 7/13 INCH最长下降时间:2.5 ns
频率调整-机械:NO频率稳定性:20%
JESD-609代码:e4安装特点:SURFACE MOUNT
标称工作频率:50 MHz最高工作温度:105 °C
最低工作温度:-40 °C振荡器类型:LVCMOS
输出负载:15 pF物理尺寸:5.0mm x 3.2mm x 0.8mm
最长上升时间:2.5 ns最大供电电压:1.98 V
最小供电电压:1.62 V标称供电电压:1.8 V
表面贴装:YES最大对称度:45/55 %
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)Base Number Matches:1

IM820B-1ETFO-50.0000MHZ 数据手册

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MEMS Oscillator, High Temperature, LVCMOS/HCMOS Compatible, 1.000 MHz to 100.000MHz  
IM820 Series  
Features:  
Typical Applications:  
MEMS Technology  
Direct pin to pin drop-in replacement for industry-standard packages  
LVCMOS/HCMOS Compatible Output  
Industry-standard package 2.0 x1.6, 2.5 x 2.0, 3.2 x 2.5, and 5.0 x 3.2 mm x mm  
Pb-free, RoHS and REACH compliant  
Fibre Channel  
Server and Storage  
GPON, EPON  
100M / 1G /10G Ethernet  
Fast delivery times  
Electronic Specifications:  
Frequency Range  
1.000 MHz to 110.000MHz  
Frequency Stability  
See Part Number Guide  
Inclusive of Initial Tolerance, Operating Temperature Range, Load, Voltage,  
and Aging  
Operating Temperature  
Supply Voltage (Vdd) ±10%  
Current Consumption  
See Part Number Guide  
See Part Number Guide  
3.8 mA typ./ 4.7 mA max  
3.6 mA typ./ 4.5 mA max  
3.5 mA typ./ 4.5 mA max  
No load condition, F = 20 MHz, Vdd = +2.8 V, +3.0 V or +3.3 V  
No load condition, F = 20 MHz, Vdd = +2.5 V  
No load condition, F = 20 MHz, Vdd = +1.8 V  
OE Disable Current  
Standby Current  
4.5 mA max  
4.3 mA max  
Vdd = +2.5 V, to +3.3 V, OE = Low, output is high Z state  
Vdd = +1.8 V, OE = Low, output is high Z state  
ꢀꢀꢀ  
2.6 µA typ./ 8.5 µA max  
1.4 µA typ. 5.5 µA max  
0.6 µA typ./ 4.0 µA max  
Vdd = +2.8 V to 3.3 V, ST = low  
ꢀꢀꢀ  
Vdd = +2.5 V, ST = Low  
ꢀꢀꢀ  
Vdd = +1.8 V, ST = Low  
Waveform Output  
Symmetry  
LVCMOS/HCMOS  
45%/55%  
50% of waveform  
Rise / Fall Time  
1.0 nSec typ./ 2.0 nSec max  
1.3 nSec typ./ 2.5 nSec max  
Vdd = +2.5 V, +2.8 V, 3.0 V or 3.3 V from 20% to 80% of waveform  
Vdd = +1.8 V, from 20% or 80% of waveform  
Logic “1”  
90% of Vdd min  
10% of Vdd max  
70% of Vdd min  
30% of Vdd max  
Logic “0”  
ꢀꢀꢀ  
Input Voltage High  
Input Voltage Low  
Input Pull-up Impedance  
Pin 1, OE or ST  
ꢀꢀꢀ  
Pin 1, OE or ST  
ꢀꢀꢀ  
50 kmin, 87 ktyp./ 150 kmax  
2.0 Mmin  
Pin 1, OE logic high or logic low, or ST logic high  
ꢀꢀꢀ  
Pin 1, ST logic low  
Startup Time  
5 mSec max  
130 nSec max  
5 mSec max  
Measured from the time Vdd reaches its rated minimum values  
Enable/Disable Time  
Resume Time  
F = 110 MHz, For other frequencies, T_oe = 100 nSec + 3 * clock periods  
ꢀꢀꢀ  
Measured from the time ST pin crosses 50% threshold.  
RMS Period Jitter  
1.6 pSec typ./ 2.5 pSec max  
1.9 pSec typ./ 3.0 pSec max  
F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V  
F = 75 MHz, Vdd = +1.8 V  
Peak-to-Peak Period Jitter  
12 pSec typ./ 20 pSec max  
14 pSec typ./ 25 pSec max  
F = 75 MHz, Vdd = +2.5 V, +2.8 V, +3.0 V or +3.3 V  
F = 75 MHz, Vdd = +1.8 V  
RMS Period Jitter (random) 0.5 pSec typ./ 0.8 pSec max  
F = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz  
F = 75 MHz, Integration bandwidth = 12.0 kHz to 20.0 MHz  
1.3 pSec typ./ 2.0 pSec max  
Notes:  
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.  
Typical values are at +25ºC and nominal supply voltage.  
Rev 01/30/16_A  
Page 1 of 9  
ILSI America Phone 775-851-8880 Fax 775-851-8882 email: e-mail@ilsiamerica.com ●  
www.ilsiamerica.com  
Specifications subject to change without notice