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IM4J-65608V-45 PDF预览

IM4J-65608V-45

更新时间: 2024-11-04 20:25:11
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TEMIC /
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10页 193K
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IM4J-65608V-45 数据手册

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M65608  
128 K x 8 Ultimate CMOS SRAM  
Introduction  
The M 65608 is a very low power CMOS static RAM  
organized as 131072 × 8 bits. It is manufactured using  
the TEMIC high performance CMOS technology named  
SCMOS.  
current (Typical value = 0.2 µA) with a fast access time  
at 25 ns over the full commercial temperature range.  
The high stability of the 6T cell provides excellent  
protection against soft errors due to noise.  
With this process, TEMIC brings the solution to  
applications where fast computing is as mandatory as  
low consumption, such as aerospace electronics,  
portable instruments, or embarked systems.  
For military/space applications that demand superior  
levels of performance and reliability the M 65608 is  
processed according to the methods of the latest revision  
of the MIL STD 883 (class B or S) and/or ESA SCC  
9000.  
Utilizing an array of six transistors (6T) memory cells,  
the M 65608 combines an extremely low standby supply  
Features  
D Access time : commercial : 25/30/35/45 ns  
industrial and military : 25/30/35/45 ns  
D Very low power consumption  
active : 250 mW (Typ)  
D TTL compatible inputs and outputs  
D Asynchronous  
D Single 5 volt supply  
D Equal cycle and access time  
D Gated inputs :  
standby : 1 µW (Typ)  
data retention : 0.5 µW (Typ)  
no pull-up/down  
D Wide temperature Range : –55 To +125°C  
resistors are required  
D 400 Mils width package  
Interface  
Block Diagram  
MATRA MHS  
1
Rev. B (23/03/96)  

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