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ILP03N60 PDF预览

ILP03N60

更新时间: 2024-09-15 21:54:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
15页 331K
描述
LightMOS Power Transistor

ILP03N60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.69其他特性:AVALANCHE RATED
外壳连接:COLLECTOR最大集电极电流 (IC):4.5 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:3.9 V门极-发射极最大电压:30 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):27 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):240 ns标称接通时间 (ton):65 ns
Base Number Matches:1

ILP03N60 数据手册

 浏览型号ILP03N60的Datasheet PDF文件第2页浏览型号ILP03N60的Datasheet PDF文件第3页浏览型号ILP03N60的Datasheet PDF文件第4页浏览型号ILP03N60的Datasheet PDF文件第5页浏览型号ILP03N60的Datasheet PDF文件第6页浏览型号ILP03N60的Datasheet PDF文件第7页 
ILA03N60, ILP03N60  
ILB03N60, ILD03N60  
LightMOS Power Transistor  
C
New high voltage technology designed for ZVS-switching in lamp  
ballasts  
P-TO-220-3-31  
G
IGBT with integrated reverse diode  
4A current rating for reverse diode  
Up to 10 times lower gate capacitance than MOSFET  
Avalanche rated  
E
(TO-220 FullPak)  
150°C operating temperature  
FullPak isolates 2.5 kV AC (1 min.)  
P-TO-263-3-2 (D2-PAK)  
(TO-263AB)  
P-TO-252-3-1 (D-PAK)  
(TO-252AA)  
P-TO-220-3-1  
(TO-220AB)  
Type  
VCE  
IC  
VCE(sat),Tj=25°C  
Tj,max  
Package  
Ordering Code  
ILA03N60  
ILP03N60  
ILB03N60  
ILD03N60  
Maximum Ratings  
600V  
600V  
600V  
600V  
3.0A  
3.0A  
3.0A  
3.0A  
2.9V  
2.9V  
2.9V  
2.9V  
150°C  
150°C  
150°C  
150°C  
P-TO-220-3-31 Q67040-S4626  
P-TO-220-3-1  
P-TO-263-3-2  
P-TO-252-3-1  
Q67040-S4628  
Q67040-S4627  
Q67040-S4625  
Value  
ILA03N60  
Parameter  
Symbol  
Unit  
Others  
Collector-emitter voltage  
DC collector current  
VCE  
IC  
600  
V
A
3
2.2  
4.5  
3
TC = 25°C  
TC = 100°C  
Pulsed collector current, tp limited by Tjmax, tp < 10 ms  
Pulsed collector current, tp limited by Tjmax  
ICpuls  
IF  
IFpuls  
EAS  
9
5.5  
4
2.2  
4
2.5  
Diode forward current  
TC = 25°C  
TC = 100°C  
Diode pulsed current, tp limited by Tjmax, tp < 10 ms  
Diode pulsed current, tp limited by Tjmax  
9
5.5  
0.32  
Avalanche energy, single pulse  
mJ  
IC=0.4A, VCE=50V  
Gate-emitter voltage  
Reverse diode dv/dt  
VGE  
dv/dt  
V
V/ns  
±30  
11  
IC 3A, VCE 450V, Tjmax 150°C  
Power dissipation (TC = 25°C)  
Operating junction and storage temperature  
Ptot  
Tstg  
Ts  
16.5  
27  
W
-55...+150  
255  
°C  
Soldering temperature  
D-Pak  
Others  
for 10 s (according to JEDEC J-STA-020A)  
220  
1 Reverse diode of transistor is commutated with same device according to figure C. With application  
relevant values IC 1.5A, CSnubber = 1 nF and RG 50, dv/dt of the reverse diode is within its specification.  
1
Rev. 1.2 Apr-04  
Power Semiconductors  

ILP03N60 替代型号

型号 品牌 替代类型 描述 数据表
ILD03N60 INFINEON

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LightMOS Power Transistor
ILB03N60 INFINEON

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LightMOS Power Transistor

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