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ILD211

更新时间: 2024-01-10 07:58:10
品牌 Logo 应用领域
英飞凌 - INFINEON 光电
页数 文件大小 规格书
2页 57K
描述
DUAL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

ILD211 技术参数

是否Rohs认证: 不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.88
当前传输比率-最小值:20%最大正向电流:0.03 A
最大正向电压:1.55 V最大绝缘电压:3000 V
JESD-609代码:e0安装特点:SURFACE MOUNT
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C最大功率耗散:0.25 W
子类别:Optocoupler - Transistor Outputs表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)

ILD211 数据手册

 浏览型号ILD211的Datasheet PDF文件第2页 
ILD205/206/207/211/213/217  
DUAL PHOTOTRANSISTOR  
SMALL OUTLINE  
SURFACE MOUNT OPTOCOUPLER  
FEATURES  
• Two Channel Coupler  
Dimensions in inches (mm)  
• Industry Standard SOIC-8 Surface Mountable  
Package  
Pin 1  
Anode 1  
Cathode 2  
Anode 3  
8
7
6
5
Collector  
Emitter  
.120±.002  
(3.05±.05)  
.240  
(6.10)  
• Standard Lead Spacing of .05"  
• Available in Tape and Reel Option  
(Conforms to EIA Standard 481-2)  
• Isolation Test Voltage, 2500 VRMS  
• High Current Transfer Ratios  
ILD205, 40 – 80%  
ILD206, 63 –125%  
ILD207, 100 – 200%  
ILD211, 20% Minimum  
ILD213, 100% Minimum  
.154±.002  
(3.91±.05)  
C
L
Collector  
Emitter  
Cathode 4  
.016 (.41)  
7°  
40°  
.058±.005  
(1.49±.13)  
.015±.002  
(.38±.05)  
.230±.002  
(4.88±.05)  
.004 (.10)  
.008 (.20)  
.125±.005  
(3.18±.13)  
.008 (.20)  
5° Max.  
ILD217, 100% Minimum at 1 mA  
• High BVCEO, 70 V  
• Compatible with Dual Wave, Vapor Phase and  
IR Reflow Soldering  
R.010  
(.25) Max.  
Lead  
.050 (1.27) Typ.  
.020±.004  
(.15±.10)  
2 Plcs.  
Coplanarity  
±.001 (.04)  
Max.  
.040 (1.02)  
DESCRIPTION  
Characteristics (T =25°C)  
A
The ILD205/206/207/211/213/217 are optically  
coupled pairs with a gallium arsenide infrared LED  
and a silicon NPN phototransistor. Signal informa-  
tion, including a DC level, can be transmitted by  
the device while maintaining a high degree of elec-  
trical isolation between input and output. The  
ILD205/6/7/11/13/17 come in a standard SOIC-8  
small outline package for surface mounting which  
makes it ideally suited for high density applications  
with limited space. In addition to eliminating  
Parameter  
Min.  
Typ  
Max  
.
Unit  
Test  
Condition  
Emitter  
Forward Voltage  
Reverse Current  
Capacitance  
Detector  
1.2  
0.1  
25  
1.55  
100  
V
I =10 mA  
F
mA  
pF  
V =6.0 V  
R
V =0  
R
BV  
70  
7
V
I =10 mA  
C
CEO  
through-holes requirements, this package con-  
forms to standards for surface mounted devices.  
BV  
V
I =10 mA  
E
ECO  
CEO  
I
5
50  
nA  
V =10 V  
CE  
A specied minimum and maximum CTR allows a  
narrow tolerance in the electrical design of the  
I =0  
F
Collector-Emitter  
Capacitance  
10  
pF  
V =0  
CE  
adjacent circuits. The high BV  
of 70 volts gives  
CEO  
a higher safety margin compared to the industry  
standard of 30 volts.  
Package  
Maximum Ratings (Each Channel)  
DC Current Transfer  
ILD205  
ILD206  
ILD207  
ILD211  
ILD213  
ILD205  
ILD206  
ILD207  
V =5 V  
CE  
40  
63  
100  
20  
100  
13  
22  
34  
100  
80  
125  
200  
%
%
%
I =10 mA  
F
Emitter  
I =10 mA  
F
Peak Reverse Voltage .....................................6.0 V  
Peak Pulsed Current (1 µs, 300 pps).................1 A  
Continuous Forward Current per Channel ....30 mA  
Power Dissipation at 25°C............................45 mW  
Derate Linearly from 25°C ......................0.5 mW/°C  
I =10 mA  
F
I =10 mA  
F
%
%
%
%
%
I =10 mA  
F
30  
45  
70  
130  
I =1 mA  
F
I =1 mA  
F
I =1 mA  
F
ILD217  
I =1 mA  
F
Detector  
Collector-Emitter Saturation  
I =10 mA  
F
Collector-Emitter Breakdown Voltage ...............70 V  
Emitter-Collector Breakdown Voltage .................7 V  
Power Dissipation per Channel....................55 mW  
Derate Linearly from 25°C ....................0.55 mW/°C  
Voltage V  
0.4  
V
I =2.5 mA  
CE (sat)  
F
Capacitance, Input to  
Output  
0.5  
pF  
Isolation Test Voltage  
Resistance, Input to Output  
Turn-on Time  
2500  
VAC  
GΩ  
µs  
t=1 min.  
RMS  
Package  
100  
5.0  
4.0  
Total Package Dissipation at 25°C Ambient  
(2 LEDs + 2 Detectors, 2 Channels).......200 mW  
Derate Linearly from 25°C ......................2.0 mW/°C  
Storage Temperature –55°C ................... to +150°C  
Operating Temperature –55°C ............... to +100°C  
Soldering Time at 260°C ............................. 10 sec.  
I =2 mA,  
C
R = 100 Ω  
E
Turn-off Time  
µs  
V
=5 V  
CE  
AUGUST 1995  
5–1  

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