ILD217

更新时间： 2024-11-01 22:33:47

品牌	Logo	应用领域
英飞凌 - INFINEON		光电输出元件
页数	文件大小	规格书
2页	57K
描述
DUAL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

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技术参数
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ILD217 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SO-8	Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00	风险等级：	5.48
Coll-Emtr Bkdn Voltage-Min：	70 V	配置：	SEPARATE, 2 CHANNELS
标称电流传输比：	100%	最大暗电源：	50 nA
最大正向电流：	0.03 A	最大绝缘电压：	2500 V
JESD-609代码：	e0	元件数量：	2
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ILD217 数据手册

ILD205/206/207/211/213/217

DUAL PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

FEATURES

• Two Channel Coupler

Dimensions in inches (mm)

• Industry Standard SOIC-8 Surface Mountable

Package

Pin 1

Anode 1

Cathode 2

Anode 3

Collector

Emitter

.120±.002

(3.05±.05)

.240

(6.10)

• Standard Lead Spacing of .05"

• Available in Tape and Reel Option

(Conforms to EIA Standard 481-2)

• Isolation Test Voltage, 2500 VRMS

• High Current Transfer Ratios

ILD205, 40 – 80%

ILD206, 63 –125%

ILD207, 100 – 200%

ILD211, 20% Minimum

ILD213, 100% Minimum

.154±.002

(3.91±.05)

Collector

Emitter

Cathode 4

.016 (.41)

7°

40°

.058±.005

(1.49±.13)

.015±.002

(.38±.05)

.230±.002

(4.88±.05)

.004 (.10)

.008 (.20)

.125±.005

(3.18±.13)

.008 (.20)

5° Max.

ILD217, 100% Minimum at 1 mA

• High BVCEO, 70 V

• Compatible with Dual Wave, Vapor Phase and

IR Reﬂow Soldering

R.010

(.25) Max.

Lead

.050 (1.27) Typ.

.020±.004

(.15±.10)

2 Plcs.

Coplanarity

±.001 (.04)

Max.

.040 (1.02)

DESCRIPTION

Characteristics (T =25°C)

The ILD205/206/207/211/213/217 are optically

coupled pairs with a gallium arsenide infrared LED

and a silicon NPN phototransistor. Signal informa-

tion, including a DC level, can be transmitted by

the device while maintaining a high degree of elec-

trical isolation between input and output. The

ILD205/6/7/11/13/17 come in a standard SOIC-8

small outline package for surface mounting which

makes it ideally suited for high density applications

with limited space. In addition to eliminating

Parameter

Min.

Typ

Max

Unit

Test

Condition

Emitter

Forward Voltage

Reverse Current

Capacitance

Detector

1.2

0.1

1.55

100

I =10 mA

V =6.0 V

V =0

I =10 mA

CEO

through-holes requirements, this package con-

forms to standards for surface mounted devices.

I =10 mA

ECO

CEO

V =10 V

A speciﬁed minimum and maximum CTR allows a

narrow tolerance in the electrical design of the

I =0

Collector-Emitter

Capacitance

V =0

adjacent circuits. The high BV

of 70 volts gives

CEO

a higher safety margin compared to the industry

standard of 30 volts.

Package

Maximum Ratings (Each Channel)

DC Current Transfer

ILD205

ILD206

ILD207

ILD211

ILD213

ILD205

ILD206

ILD207

V =5 V

100

125

200

I =10 mA

Emitter

I =10 mA

Peak Reverse Voltage .....................................6.0 V

Peak Pulsed Current (1 µs, 300 pps).................1 A

Continuous Forward Current per Channel ....30 mA

Power Dissipation at 25°C............................45 mW

Derate Linearly from 25°C ......................0.5 mW/°C

I =10 mA

130

I =1 mA

ILD217

I =1 mA

Detector

Collector-Emitter Saturation

I =10 mA

Collector-Emitter Breakdown Voltage ...............70 V

Emitter-Collector Breakdown Voltage .................7 V

Power Dissipation per Channel....................55 mW

Derate Linearly from 25°C ....................0.55 mW/°C

Voltage V

0.4

I =2.5 mA

CE (sat)

Capacitance, Input to

Output

0.5

Isolation Test Voltage

Resistance, Input to Output

Turn-on Time

2500

VAC

GΩ

µs

t=1 min.

RMS

Package

100

5.0

4.0

Total Package Dissipation at 25°C Ambient

(2 LEDs + 2 Detectors, 2 Channels).......200 mW

Derate Linearly from 25°C ......................2.0 mW/°C

Storage Temperature –55°C ................... to +150°C

Operating Temperature –55°C ............... to +100°C

Soldering Time at 260°C ............................. 10 sec.

I =2 mA,

R = 100 Ω

Turn-off Time

µs

=5 V

AUGUST 1995

5–1

中文翻译

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