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ILD223T

更新时间: 2024-11-27 22:33:47
品牌 Logo 应用领域
威世 - VISHAY 光电输出元件PC
页数 文件大小 规格书
2页 401K
描述
Dual Photodarlington Small Outline Surface Mount Optocoupler

ILD223T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOIC-8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00Factory Lead Time:18 weeks
风险等级:1.3Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:186693
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (8-Pin)Samacsys Footprint Name:ILD223T
Samacsys Released Date:2017-03-07 16:06:15Is Samacsys:N
Coll-Emtr Bkdn Voltage-Min:30 V配置:SEPARATE, 2 CHANNELS
当前传输比率-最小值:500%标称电流传输比:500%
最大暗电源:50 nA最大正向电流:0.03 A
最大正向电压:1.3 V最大绝缘电压:3000 V
JESD-609代码:e3安装特点:SURFACE MOUNT
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER
最大功率耗散:0.075 W子类别:Optocoupler - Transistor Outputs
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

ILD223T 数据手册

 浏览型号ILD223T的Datasheet PDF文件第2页 
ILD223T  
Dual Photodarlington  
Small Outline Surface Mount Optocoupler  
FEATURES  
• Two Channel Optocoupler  
Dimensions in inches (mm)  
Pin 1  
• High Current Transfer Ratio at I =1.0 mA,  
500% Min.  
F
Anode 1  
Cathode 2  
Anode 3  
8 Collector  
7 Emitter  
.120 .002  
(3.05 .05)  
• Isolation Test Voltage, 3000 V  
RMS  
.154 .002  
(3.91 .05)  
C
.240  
(6.10)  
L
6 Collector  
5 Emitter  
• Electrical Specifications Similar to Standard  
6-pin Coupler  
Cathode 4  
• Compatible with Dual Wave, Vapor Phase and  
IR Reflow Soldering  
.016 (.41)  
.230 .002  
(5.84 .05)  
• SOIC-8 Surface Mountable Package  
• Standard Lead Spacing, .05"  
40°  
.015 .002  
(.38 .05)  
7°  
.058  
(1.49)  
.125 (3.18)  
• Available only on Tape and Reel Option (Con-  
forms to EIA Standard 481-2)  
• Underwriters Lab File #E52744  
.008 (.20)  
.004 (.10)  
.008 (.20)  
5° max.  
Lead  
.050 (1.27) typ.  
.040 (1.02)  
R.010  
(.25) max.  
Coplanarity  
.001 (.04)  
max.  
.020 .004  
(.5 .10)  
2 plcs.  
DESCRIPTION  
.
The ILD223T is a high current transfer ratio (CTR)  
optocoupler. It has a Gallium Arsenide infrared LED  
emitter and a silicon NPN photodarlington transis-  
tor detector.  
Table 1. Characteristics T =25°C  
A
Parameter  
Symbol Min. Typ. Max. Unit Condition  
This device has CTRs tested at an LED current of  
1.0 mA. This low drive current permits easy inter-  
facing from CMOS to LSTTL or TTL.  
Emitter  
Forward Voltage  
Reverse Current  
Capacitance  
V
I
1.3  
100  
V
I =1.0 mA  
F
F
0.1  
25  
µA  
pF  
V =6.0 V  
R
R
The ILD223T is constructed in a standard SOIC-8A  
foot print which makes it ideally suited for high den-  
sity applications. In addition to eliminating through-  
holes requirements, this package conforms to stan-  
dards for surface mounted devices.  
C
V =0 V  
O
F
F=1.0 MHz  
Detector  
Breakdown  
Voltage  
BV  
BV  
30  
5.0  
50  
V
I =10 µA  
E
CEO  
ECO  
C
Maximum Ratings (Each Channel)  
Emitter  
I =10 µA  
Peak Reverse Voltage ..................................... 6.0 V  
Peak Pulsed Current (1.0 µs, 300 pps) ........... 3.0 A  
Continuous Forward Current per Channel .... 30 mA  
Power Dissipation at 25°C............................ 45 mW  
Derate Linearly from 25°C...................... 0.4mW/°C  
Detector  
Current,  
Collector-Emitter  
I
nA  
pF  
V
=5.0 V  
CE  
CEO  
I =0  
F
Capacitance,  
Collector-Emitter  
C
3.4  
V
=5.0 V  
CE  
CE  
Package  
Collector-Emitter Breakdown Voltage............... 30 V  
Emitter-Collector Breakdown Voltage.............. 5.0 V  
Power Dissipation per Channel.................... 75 mW  
Derate Linearly from 25°C...................... 3.1mW/°C  
Package  
DC Current  
CTR  
500  
%
V
I =1.0 mA,  
F
CE  
DC  
Transfer Ratio  
V
=5.0 V  
Saturation  
Voltage,  
Collector-Emitter  
V
1.0  
I =1.0 mA,  
F
CEsat  
I
=0.5 mA  
CE  
Total Package Dissipation at 25°C Ambient  
(2 LEDs + 2 Detectors, 2 Channels)....... 240 mW  
Derate Linearly from 25°C...................... 2.0mW/°C  
Storage Temperature ................... –55°C to +150°C  
Operating Temperature ................ –55°C to +100°C  
Soldering Time at 260°C ...............................10 sec  
Capacitance,  
C
R
0.5  
pF  
V
IO  
Input to Output  
Resistance,  
Input to Output  
100  
GΩ  
IO  
Turn-On Time  
Turn-Off Time  
t
t
15  
30  
µs  
µs  
=10 V  
ON  
CC  
R =100 Ω  
L
OFF  
I =5.0 mA  
F
Isolation Test  
Voltage  
V
3000  
V
t=1.0 sec.  
IO  
RMS  
Document Number: 83648  
Revision 17-August-01  
www.vishay.com  
2–183  

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