ILD223
DUAL PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• Two Channel Optocoupler
Dimensions in inches (mm)
Pin 1
.154±.005
• High Current Transfer Ratio at I =1 mA,
500% Min.
Anode 1
Cathode 2
Anode 3
8
7
6
5
Collector
Emitter
F
.120±.005
(3.05±.13)
.240
(6.10)
• Isolation Test Voltage, 2500 VRMS
• Electrical Specifications Similar to Standard
6-pin Coupler
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
C
L
(3.91±.13)
Collector
Emitter
Cathode 4
.016 (.41)
7°
40°
.058±.005
(1.49±.13)
.015±.002
(.38±.05)
.192±.005
(4.88±.13)
• Industry Standard SOIC-8 Surface Mountable
Package
.004 (.10)
.008 (.20)
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option (Conforms
to EIA Standard 481-2)
.125±.005
(3.18±.13)
.008 (.20)
5° Max.
R.010
(.25) Max.
Lead
.050 (1.27) Typ.
• Underwriters Lab File #E52744
.020±.004
(.15±.10)
2 Plcs.
Coplanarity
±.001 (.04)
Max.
DESCRIPTION
.040 (1.02)
The ILD223 is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
Characteristics (T =25°C)
A
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
This device has CTRs tested at an LED current of
1 mA. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
Forward Voltage
Reverse Current
Capacitance
V
1.3
V
I =1 mA
F
F
I
0.1
25
100
µA
pF
V =6.0 V
R
R
The ILD223 is constructed in a standard SOIC-8
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
C
V =0 V,
O
F
F=1 MHz
Detector
Breakdown
Voltage
Collector-Emitter
Emitter-Collector
Maximum Ratings (Each Channel)
Emitter
BV
30
5
V
V
I =10 mA
C
CEO
BV
I =10 mA
ECO
E
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1 µs, 300 pps).................3 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25°C............................45 mW
Derate Linearly from 25°C ......................0.4 mW/°C
Current,
Collector-Emitter
I
50
nA
V =5 V,
CE
CEO
I =0
F
Capacitance,
Collector-Emitter
C
3.4
pF
V =5 V
CE
CE
Detector
Package
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................5 V
Power Dissipation per Channel................... 75 mW
Derate Linearly from 25°C ......................3.1 mW/°C
DC Current
Transfer Ratio
CTR
500
0.5
%
V
I =1 mA,
F
DC
V =5 V
CE
Saturation
V
1
I =1 mA,
F
CEsat
Voltage,
Collector-Emitter
I
=0.5 mA
Package
CE
Total Package Dissipation at 25°C Ambient
(2 LEDs + 2 Detectors, 2 Channels).......240 mW
Derate Linearly from 25°C .........................2 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Capacitance,
Input to Output
C
R
pF
IO
Resistance,
Input to Output
100
15
GΩ
µs
IO
ON
OFF
Turn-On Time
Turn-Off Time
t
t
V
=10 V
CC
R =100Ω
L
30
µs
I =5 mA
F
Isolation Test
Voltage
V
(t=1 min.)
2500 VAC
IO
RMS
5–1