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ILD255

更新时间: 2024-11-27 22:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 光电输入元件
页数 文件大小 规格书
2页 81K
描述
BIDIRECTIONAL INPUT OPTOCOUPLER

ILD255 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DIP-8Reach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.45
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SEPARATE, 2 CHANNELS标称电流传输比:50%
最大暗电源:50 nA最大正向电流:0.13 A
最大绝缘电压:5300 VJESD-609代码:e0
元件数量:2最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

ILD255 数据手册

 浏览型号ILD255的Datasheet PDF文件第2页 
DUAL CHANNEL ILD255  
BIDIRECTIONAL INPUT  
OPTOCOUPLER  
FEATURES  
Dimensions in inches (mm)  
• AC or Polarity Insensitive Inputs  
• Continuous Forward Current, 130 mA  
• Applications—Telecommunications  
- Ring Detection  
Pin One I.D.  
4
3
2
1
Anode/  
1
2
3
4
8
7
6
5
Emitter  
Cathode  
Cathode/  
.268 (6.81)  
.255 (6.48)  
- Loop Current Detector  
Collector  
Collector  
Emitter  
Anode  
• Built-in Reverse Polarity Input Protection  
• Improved CTR Symmetry  
• Industry Standard DIP Package  
• Underwriters Lab File #E52744  
VE  
Anode/  
Cathode  
Cathode/  
Anode  
5
6
7
8
.390 (9.91)  
.379 (9.63)  
VDE 0884 Available with Option 1  
D
DESCRIPTION  
.305 typ.  
(7.75) typ.  
The ILD255 is a bidirectional input optically cou-  
pled isolator consisting of two high current Gallium  
Arsenide infrared LEDs coupled to a silicon NPN  
phototransistor per channel. The ILD255 has a  
minimum CTR of 50%  
.045 (1.14)  
.030 (.76)  
.150 (3.81)  
.130 (3.30)  
.135 (3.43)  
.115 (2.92)  
4°  
Typ.  
10 °  
Typ.  
These optocouplers are ideal for applications  
requiring AC signal detection and monitoring.  
.040 (1.02)  
.030 (.76 )  
3°–9°  
.022 (.56)  
.018 (.46)  
.012 (.30)  
Maximum Ratings (Each Channel)  
.008 (.20)  
.100 (2.54)  
Typ.  
Emitter  
Peak Pulsed Current (1 µs, 300 pps)................. 3 A  
Continuous Forward Current...............130 mA RMS  
Power Dissipation at 25°C ......................... 175 mW  
Derate Linearly from 25°C ..................... 2.3 mW/°C  
Electrical Characteristics (T =25°C)  
A
Parameter  
Emitter  
MIn.  
Typ.  
Max.  
Unit  
Condition  
Detector  
Collector-Emitter Breakdown Voltage ............. 30 V  
Emitter-Base Breakdown Voltage ..................... 5 V  
Power Dissipation at 25°C ......................... 200 mW  
Derate Linearly from 25°C ..................... 2.6 mW/°C  
Forward Voltage V  
1.2  
1.5  
V
I =±10 mA  
F
F
Detector  
BV  
Package  
30  
7
50  
10  
5
V
I =10 mA  
C
CEO  
Isolation Test Voltage (between emitter  
and detector referred to standard  
climate 23°C/50%RH,  
BV  
V
I =10 µA  
E
ECO  
CEO  
I
50  
nA  
V =10 V  
CE  
DIN 50014).....................................5300 VAC  
RMS  
Creepage ................................................min. 7 mm  
Clearance ...............................................min. 7 mm  
Package  
Isolation Resistance  
V
0.4  
V
I =±16 mA,  
F
C
CEsat  
12  
I =2 mA  
V =500 V, T =25°C.......................... R 10  
IO  
A
IO  
11  
V =500 V, T =100°C........................ R 10  
IO  
A
IO  
DC Current Transfer Ratio  
Symmetry CTR at +10 mA  
50  
%
I =±10mA,  
F
Total Dissipation at 25°C............................ 400 mW  
Derate Linearly from 25°C ..................... 5.3 mW/°C  
Storage Temperature –55°C .................. to +150°C  
Operating Temperature –55°C ............... to +100°C  
Lead Soldering Time at 260°C ....................10 sec.  
V
=10 V  
CE  
CTR at 10 mA 0.50  
1.0  
2.0  
5–1  

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