IL485
OPTICALLY COUPLED
HIGH SPEED MOSFET DRIVERS
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
• Fast Turn On
• Fast Turn Off
• Low Input Current
• Isolation Test Voltage, 5300 VAC
Pin One ID.
1
2
3
6
A
K
–out
2
1
3
RMS
.248 (6.30)
.256 (6.50)
5 B
4
APPLICATIONS
• Motor Drive Controls
• IGBT-predrivers
4
5
6
+out
• AC/DC Power Inverters
.335 (8.50)
.343 (8.70)
.300 (7.62)
Typ.
DESCRIPTION
.039
(1.00)
Min.
The IL485 is a photovoltatic generator (optically cou-
pled) designed to drive highly capacitive loads such
as the gate of a power MOSFET transistor and at the
same time provide isolation and floating voltage sup-
ply capability. The coupler consists of a GaAlAs light
emitting diode as input control and a custom photo IC
chip with photodiode arrary (PDA) as output device.
When the LED is turned on, the emitted light pro-
duces a voltage in the PDA. The output of the PDA is
used to drive the gate of a power MOSFET. The photo
IC chip contains additional circuitry to enhance the
switching speeds, (both turn on turn off). The opto-
coupler is packaged in a 6 pin DIP.
.130 (3.30)
.150 (3.81)
4°
Typ.
18° Typ.
.110 (2.79)
.150 (3.81)
.020 (.051) Min.
.010 (.25)
.014 (.35)
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300 (7.62)
.347 (8.82)
.100 (2.54) Typ.
Maximum Ratings
Emitter
Reverse Voltage ..................................................................................4 V
Forward Current ..............................................................................60 mA
Peak Forward Current....................................................................600 mA
Power Dissipation.........................................................................100 mW
Thermal Resistance ....................................................................700 °C/W
Detector
Breakdown Voltage (pin 5 to 6) ........................................................300 V
Peak Input Current (pin 5 to 4) ........................................................50 mA
Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA
Power Dissipation (pin 5 to 4) ......................................................150 mW
Package
Insulation Thickness between Emitter and Detector...................≥0.4 mm
Isolation Test Voltage (1 sec.)..............................................5300 VAC
Isolation Resistance
RMS
12
V =500 V, T =25°C..................................................................≥10
Ω
Ω
IO
A
11
V =500 V, T =100°C...............................................................≥10
IO
A
Comparative Tracking Index per
DIN IEC 112/VDE 303, Part 1.........................................................≥175
Total Power Dissipation ................................................................250 mW
Storage Temperature Range ..........................................–55°C to +150°C
Operating Temperature Range .......................................–55°C to +100°C
Junction Temperature ...................................................................... 100°C
Soldering Temperature (max. 10 sec.,
dip soldering distance to seating plane >1.5 mm)...................... 260°C
5–1