5秒后页面跳转
IDT74FCT162701TE PDF预览

IDT74FCT162701TE

更新时间: 2024-10-29 19:58:43
品牌 Logo 应用领域
艾迪悌 - IDT 先进先出芯片
页数 文件大小 规格书
9页 113K
描述
FIFO, 4X18, 6ns, Synchronous, CMOS, CDFP56, 0.635 MM PITCH, CERPACK-56

IDT74FCT162701TE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:56
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.92
最长访问时间:6 nsJESD-30 代码:R-GDFP-F56
JESD-609代码:e0长度:18.415 mm
内存密度:72 bit内存宽度:18
功能数量:1端子数量:56
字数:4 words字数代码:4
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4X18
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):225
认证状态:Not Qualified座面最大高度:2.413 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:9.652 mm
Base Number Matches:1

IDT74FCT162701TE 数据手册

 浏览型号IDT74FCT162701TE的Datasheet PDF文件第2页浏览型号IDT74FCT162701TE的Datasheet PDF文件第3页浏览型号IDT74FCT162701TE的Datasheet PDF文件第4页浏览型号IDT74FCT162701TE的Datasheet PDF文件第5页浏览型号IDT74FCT162701TE的Datasheet PDF文件第6页浏览型号IDT74FCT162701TE的Datasheet PDF文件第7页 
IDT54/74FCT162701T/AT  
FAST CMOS 18-BIT  
R/W BUFFER  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
• 0.5 MICRON CMOS Technology  
The FCT162701T/AT is an 18-bit Read/Write buffer with  
a four deep FIFO and a read-back latch. It can be used as  
a read/write buffer between a CPU and memory or to  
interface a high-speed bus and a slow peripheral. The A-  
to-B (write) path has a four deep FIFO for pipelined opera-  
• Typical tSK(o) (Output Skew) < 250ps  
• Low input and output leakage 1µA (max.)  
• ESD > 2000V per MIL-STD-883, Method 3015;  
> 200V using machine model (C = 200pF, R = 0)  
• Packagesinclude25milpitchSSOP, 19.6milpitchTSSOP, tions. The FIFO can be reset and a FIFO full condition is  
15.7 mil pitch TVSOP and 25 mil pitch Cerpack  
• Extended commercial range of -40°C to +85°C  
indicated by the full flag (FF). The B-to-A (read) path has a  
latch. A HIGH on LE, allows data to flow transparently from  
B-to-A. A LOW on LE allows the data to be latched on the  
falling edge of LE.  
• Balanced Output Drivers:  
±24mA (commercial),  
±16mA (military)  
• Reduced system switching noise  
• Typical VOLP (Output Ground Bounce) < 0.6V at  
VCC = 5V, TA = 25°C  
The FCT162701T/AT has a balanced output drive with  
series termination. This provides low ground bounce,  
minimal undershoot and controlled output edge rates.  
• Ideal for new generation x86 write-back cache solutions  
• Suitable for modular x86 architectures  
• Four deep write FIFO  
• Latch in read path  
• Synchronous FIFO reset  
FUNCTIONAL BLOCK DIAGRAM  
A1-18  
18  
OEBA  
RESET  
CLK  
LE  
FIFO  
(4 deep)  
LATCH  
WCE  
RCE  
FF  
OEAB  
18  
2915 drw 01  
B
1-18  
The IDT logo is a registered trademark of Integrated Device Techology, Inc.  
MILITARY AND INDUSTRIAL TEMPERATURE RANGES  
1997 Integrated Device Technology, Inc.  
FEBRUARY 1997  
5.16  
DSC-2915/4  
For the latest information regarding this part, please contact IDT's web site at http://www.idt.com or fax-on-demand service at (US)1-800-9-IDT-FAX / (International) 408-492-8391.  
1

与IDT74FCT162701TE相关器件

型号 品牌 获取价格 描述 数据表
IDT74FCT162701TPA ETC

获取价格

Read/Write Buffer
IDT74FCT162701TPA8 IDT

获取价格

FIFO, 4X18, 6ns, Synchronous, CMOS, PDSO56, TSSOP-56
IDT74FCT162701TPF IDT

获取价格

FIFO, 4X18, 6ns, Synchronous, CMOS, PDSO56, TVSOP-56
IDT74FCT162701TPV ETC

获取价格

Read/Write Buffer
IDT74FCT162701TPV8 IDT

获取价格

FIFO, 4X18, 6ns, Synchronous, CMOS, PDSO56, SSOP-56
IDT74FCT16270ATE IDT

获取价格

FAST CMOS 18-BIT R/W BUFFER
IDT74FCT16270ATEB IDT

获取价格

FAST CMOS 18-BIT R/W BUFFER
IDT74FCT16270ATPA IDT

获取价格

FAST CMOS 18-BIT R/W BUFFER
IDT74FCT16270ATPAB IDT

获取价格

FAST CMOS 18-BIT R/W BUFFER
IDT74FCT16270ATPF IDT

获取价格

FAST CMOS 18-BIT R/W BUFFER