是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | LQFP, QFP64,.66SQ,32 | 针数: | 64 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 25 ns | I/O 类型: | COMMON |
JESD-30 代码: | S-PQFP-G64 | JESD-609代码: | e3 |
长度: | 14 mm | 内存密度: | 16384 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 8 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 64 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2KX8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LQFP | 封装等效代码: | QFP64,.66SQ,32 |
封装形状: | SQUARE | 封装形式: | FLATPACK, LOW PROFILE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大待机电流: | 0.01 A |
最小待机电流: | 3 V | 子类别: | SRAMs |
最大压摆率: | 0.15 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71V421S25PFGI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25PFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S25PFI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TF | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S25TF8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TFG8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TFGI | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 25ns, CMOS, PQFP64, 10 X 10 MM, 1.40 MM HEIGHT, GREEN, STQFP-64 | |
IDT71V421S25TFGI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S35J | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT |