是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | QCCJ, LDCC52,.8SQ |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
最长访问时间: | 25 ns | I/O 类型: | COMMON |
JESD-30 代码: | S-PQCC-J52 | JESD-609代码: | e0 |
内存密度: | 16384 bit | 内存集成电路类型: | MULTI-PORT SRAM |
内存宽度: | 8 | 湿度敏感等级: | 1 |
端口数量: | 2 | 端子数量: | 52 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2KX8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QCCJ | 封装等效代码: | LDCC52,.8SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.01 A | 最小待机电流: | 3 V |
子类别: | SRAMs | 最大压摆率: | 0.15 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT71V421S25PF | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S25PF8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25PFG | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 25ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64 | |
IDT71V421S25PFGI | IDT |
获取价格 |
Dual-Port SRAM, 2KX8, 25ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64 | |
IDT71V421S25PFGI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25PFI | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S25PFI8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TF | IDT |
获取价格 |
HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT | |
IDT71V421S25TF8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 | |
IDT71V421S25TFG8 | IDT |
获取价格 |
Multi-Port SRAM, 2KX8, 25ns, CMOS, PQFP64 |