Datasheet > 存储 > SRAM> IDT71256L150D

IDT71256L150D

更新时间： 2024-11-15 22:57:19

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
9页	82K
描述
CMOS STATIC RAM 256K (32K x 8-BIT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT71256L150D 数据手册

IDT71256S

IDT71256L

CMOS STATIC RAM

256K (32K x 8-BIT)

Integrated Device Technology, Inc.

FEATURES:

• High-speed address/chip select time

DESCRIPTION:

— Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

— Commercial: 20/25/35/45ns (max.) Low Power only.

• Low-power operation

The IDT71256 is a 262,144-bit high-speed static RAM

organized as 32K x 8. It is fabricated using IDT’s high-

performance, high-reliability CMOS technology.

• Battery Backup operation — 2V data retention

• Produced with advanced high-performance CMOS

technology

• Input and output directly TTL-compatible

• Available in standard 28-pin (300 or 600 mil) ceramic

DIP, 28-pin (600 mil) plastic DIP, 28-pin (300 mil) SOJ

and 32-pin LCC

Address access times as fast as 20ns are available with

power consumption of only 350mW (typ.). The circuit also

offers a reduced power standby mode. When CSgoes HIGH,

the circuit will automatically go to, and remain in, a low-power

standbymodeaslongasCSremainsHIGH. Inthefullstandby

mode, the low-power device consumes less than 15µW,

typically. This capability provides significant system level

power and cooling savings. The low-power (L) version also

offers a battery backup data retention capability where the

circuit typically consumes only 5µW when operating off a 2V

battery.

• Military product compliant to MIL-STD-883, Class B

The lDT71256 is packaged in a 28-pin (300 or 600 mil)

ceramic DIP, a 28-pin 300 mil J-bend SOlC, and a 28-pin (600

mil) plastic DIP, and 32-pin LCC providing high board-level

packing densities.

TheIDT71256militaryRAMismanufacturedincompliance

with the latest revision of MIL-STD-883, Class B, making it

ideally suited to military temperature applications demanding

the highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

V_CC

GND

262,144 BIT

MEMORY ARRAY

ADDRESS

DECODER

A14

I/O 0

I/O CONTROL

INPUT

DATA

CIRCUIT

I/O ₇

CONTROL

CIRCUIT

2946 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AUGUST 1996

1996 Integrated Device Technology, Inc.

DSC-2946/7

7.2

12 3 4 5 6 7...9

中文翻译

下载PDF

与IDT71256L150D相关器件

型号	品牌	获取价格	描述	数据表
IDT71256L150DB	IDT	获取价格	CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256L150EB	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CDFP28, CERPACK-28
IDT71256L150L	IDT	获取价格	CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256L150L28B	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC28, LCC-28
IDT71256L150L28BG8	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC28, LCC-28
IDT71256L150L32B	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC32, LCC-32
IDT71256L150L32B8	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC32, LCC-32
IDT71256L150L32BG8	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC32, LCC-32
IDT71256L150LB	IDT	获取价格	CMOS STATIC RAM 256K (32K x 8-BIT)
IDT71256L150LBG	IDT	获取价格	Standard SRAM, 32KX8, 150ns, CMOS, CQCC32, LCC-32

与IDT71256L150D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

8
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71256L150D

IDT71256L150D 数据手册

与IDT71256L150D相关器件

与IDT71256L150D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT71256L150D

IDT71256L150D 数据手册

与IDT71256L150D相关器件

与IDT71256L150D相关文章

您还可以找

您在本页遇到什么问题？