是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | TQFP-100 | 针数: | 100 |
Reach Compliance Code: | not_compliant | ECCN代码: | 3A991.B.2.B |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.79 |
最长访问时间: | 9 ns | 最大时钟频率 (fCLK): | 66 MHz |
I/O 类型: | COMMON | JESD-30 代码: | S-PQFP-G100 |
JESD-609代码: | e0 | 长度: | 14 mm |
内存密度: | 294912 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 18 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 100 | 字数: | 16384 words |
字数代码: | 16000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 16KX18 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LFQFP |
封装等效代码: | QFP100,.63SQ,20 | 封装形状: | SQUARE |
封装形式: | FLATPACK, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 电源: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.6 mm |
最大待机电流: | 0.006 A | 最小待机电流: | 3 V |
子类别: | SRAMs | 最大压摆率: | 0.28 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn85Pb15) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 20 | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
709369L7PFG | IDT |
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709369L9PFG | IDT |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IDT70V9379L | IDT |
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IDT70V9379L12PRFG | IDT |
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IDT70V9379L12PRFGI | IDT |
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IDT70V9379L12PRFI | IDT |
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IDT70V9379L7PRF | IDT |
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