Datasheet > 存储 > SRAM> IDT70V659S10BCI

IDT70V659S10BCI

更新时间： 2024-10-28 22:17:47

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
23页	194K
描述
HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT70V659S10BCI 数据手册

PRELIMINARY

IDT70V659S

HIGH-SPEED 3.3V 128K x 36

ASYNCHRONOUS DUAL-PORT

STATIC RAM

Features

True Dual-Port memory cells which allow simultaneous

◆

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

access of the same memory location

High-speed access

◆

– Commercial:10/12/15ns (max.)

– Industrial:12/15ns (max.)

Dual chip enables allow for depth expansion without

◆

external logic

◆

IDT70V659 easily expands data bus width to 72 bits or

◆

more using the Master/Slave select when cascading more

than one device

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 208-pin Plastic Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

On-chip port arbitration logic

Functional Block Diagram

CE0

CE1

Dout0-8_L

Dout0-8_R

Dout9-17_L

Dout9-17_R

Dout18-26_R

Dout27-35_R

Dout18-26_L

Dout27-35_L

128K x 36

MEMORY

ARRAY

I/O - I/O

0L 35L

Di n_L

Di n_R

I/O - I/O

0R 35R

16R

A16 L

A0 L

Address

Decoder

Address

Decoder

ADDR_L

ADDR_R

CE1

ARBITRATION

CE1

INTERRUPT

SEMAPHORE

LOGIC

R/W

BUSY

SEM

M/S

SEM

INT

TMS

TCK

TDI

JTAG

TDO

TRST

4869 drw 01

NOTES:

1. BUSY is an input as a Slave (M/S=V^IL) and an output when it is a Master (M/S=VIH).

2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).

JUNE 2001

DSC-4869/3

12 3 4 5 6 7...23

中文翻译

下载PDF

与IDT70V659S10BCI相关器件

型号	品牌	获取价格	描述	数据表
IDT70V659S10BF	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S10BFG	IDT	获取价格	Dual-Port SRAM, 128KX36, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, G
IDT70V659S10BFI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S10DR	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S10DRI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S12BC	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S12BC8	IDT	获取价格	Dual-Port SRAM, 128KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-
IDT70V659S12BCGI	IDT	获取价格	Dual-Port SRAM, 128KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREE
IDT70V659S12BCI	IDT	获取价格	HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V659S12BCI8	IDT	获取价格	Dual-Port SRAM, 128KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-

与IDT70V659S10BCI相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

17
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

41
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

49

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70V659S10BCI

IDT70V659S10BCI 数据手册

与IDT70V659S10BCI相关器件

与IDT70V659S10BCI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT70V659S10BCI

IDT70V659S10BCI 数据手册

与IDT70V659S10BCI相关器件

与IDT70V659S10BCI相关文章

您还可以找

您在本页遇到什么问题？