Datasheet > 存储 > SRAM> IDT70V658S10DRI

IDT70V658S10DRI

更新时间： 2024-10-28 22:17:39

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
23页	196K
描述
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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中文翻译

获取价格

数据手册

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IDT70V658S10DRI 数据手册

PRELIMINARY

IDT70V658S

HIGH-SPEED 3.3V 64K x 36

ASYNCHRONOUS DUAL-PORT

STATIC RAM

Features

True Dual-Port memory cells which allow simultaneous

◆

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

LVTTL-compatible, single 3.3V (±150mV) power supply

for core

access of the same memory location

High-speed access

◆

– Commercial:10/12/15ns (max.)

– Industrial:12/15ns (max.)

Dual chip enables allow for depth expansion without

◆

external logic

◆

IDT70V658 easily expands data bus width to 72 bits or

◆

more using the Master/Slave select when cascading more

than one device

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in 208-pin Plastic Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

◆

On-chip port arbitration logic

Functional Block Diagram

R/W

CE0

R R

CE1

Dout0-8_L

Dout0-8_R

Dout9-17_L

Dout9-17_R

Dout18-26_R

Dout27-35_R

Dout18-26_L

Dout27-35_L

64K x 36

MEMORY

ARRAY

I/O - I/O

0L 35L

Di n_L

Di n_R

I/O - I/O

0R 35R

15R

A15 L

A0 L

Address

Decoder

Address

Decoder

ADDR_L

ADDR_R

CE1

ARBITRATION

CE1

INTERRUPT

SEMAPHORE

LOGIC

R/W

BUSY

SEM

BUSY

SEM

M/S

INT

TMS

TCK

TDI

JTAG

TDO

TRST

5613 drw 01

NOTES:

1. BUSY is an input as a Slave (M/S=V^IL) and an output when it is a Master (M/S=VIH).

2. BUSY and INT are non-tri-state totem-pole outputs (push-pull).

JUNE 2001

DSC-5613/3

12 3 4 5 6 7...23

中文翻译

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与IDT70V658S10DRI相关器件

型号	品牌	获取价格	描述	数据表
IDT70V658S12BC	IDT	获取价格	HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V658S12BCGI	IDT	获取价格	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN
IDT70V658S12BCGI8	IDT	获取价格	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-2
IDT70V658S12BCI	IDT	获取价格	HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V658S12BCI8	IDT	获取价格	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-2
IDT70V658S12BF	IDT	获取价格	HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V658S12BFGI8	IDT	获取价格	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FP
IDT70V658S12BFI	IDT	获取价格	HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V658S12BFI8	IDT	获取价格	Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FP
IDT70V658S12DR	IDT	获取价格	HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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