是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | BGA, BGA324,18X18,40 | 针数: | 324 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.55 |
Is Samacsys: | N | 最长访问时间: | 15 ns |
其他特性: | PIPELINED OR FLOW-THRIOUGH ARCHITECTURE | I/O 类型: | COMMON |
JESD-30 代码: | S-PBGA-B324 | JESD-609代码: | e1 |
内存密度: | 9437184 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 72 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 324 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 128KX72 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA324,18X18,40 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 2.5,2.5/3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.02 A |
最小待机电流: | 2.4 V | 子类别: | SRAMs |
最大压摆率: | 0.74 mA | 最大供电电压 (Vsup): | 2.6 V |
最小供电电压 (Vsup): | 2.4 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IDT70T3799MS166BBG | IDT |
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IDT70T3799MS133BBGI | IDT |
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HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE | |
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