Datasheet > 存储 > SRAM> IDT7006S35G

IDT7006S35G

更新时间： 2024-11-08 23:01:07

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
20页	262K
描述
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IDT7006S35G 数据手册

IDT7006S/L

HIGH-SPEED

16K x 8 DUAL-PORT

STATIC RAM

Integrated Device Technology, Inc.

• On-chip port arbitration logic

• Full on-chip hardware support of semaphore signaling

between ports

• Fully asynchronous operation from either port

• Devices are capable of withstanding greater than 2001V

electrostatic discharge

• Battery backup operation—2V data retention

• TTL-compatible, single 5V (±10%) power supply

• Available in a 68-pin PGA, a 68-pin quad flatpack, a 68-

pin PLCC, and a 64-pin TQFP

FEATURES:

• True Dual-Ported memory cells which allow simulta-

neous access of the same memory location

• High-speed access

— Military: 20/25/35/55/70ns (max.)

— Commercial: 15/17/20/25/35/55ns (max.)

• Low-power operation

— IDT7006S

Active: 750mW (typ.)

Standby: 5mW (typ.)

— IDT7006L

• Industrial temperature range (–40°C to +85°C) is avail-

able, tested to military electrical specifications

Active: 750mW (typ.)

Standby: 1mW (typ.)

DESCRIPTION:

• IDT7006 easily expands data bus width to 16 bits or

more using the Master/Slave select when cascading

more than one device

• M/S = H for BUSY output flag on Master,

M/S = L for BUSY input on Slave

• Busy and Interrupt Flags

The IDT7006 is a high-speed 16K x 8 Dual-Port Static

RAM. The IDT7006 is designed to be used as a stand-alone

Dual-Port RAM or as a combination MASTER/SLAVE Dual-

Port RAM for 16-bit-or-more word systems. Using the IDT

MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider

FUNCTIONAL BLOCK DIAGRAM

OEL

OER

CEL

CER

R/WR

R/W

I/O0L- I/O7L

I/O0R-I/O7R

(1,2)

I/O

Control

I/O

Control

BUSY^(1,2)

BUSY

13L

13R

Address

Decoder

MEMORY

ARRAY

Address

Decoder

NOTES:

1. (MASTER):

BUSY is

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

output;

(SLAVE):

BUSY is input.

2. BUSY outputs

and INT

outputs are

non-tri-stated

push-pull.

SEM

(2)

INT ⁽²⁾

INTR

M/S

2739 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

OCTOBER 1996

DSC-2739/5

For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.

6.07

12 3 4 5 6 7...20

中文翻译

下载PDF

与IDT7006S35G相关器件

型号	品牌	获取价格	描述	数据表
IDT7006S35GB	IDT	获取价格	HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S35GG	IDT	获取价格	Dual-Port SRAM, 16KX8, 35ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, GREEN, C
IDT7006S35GGB	IDT	获取价格	Dual-Port SRAM, 16KX8, 35ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, GREEN, C
IDT7006S35GI	IDT	获取价格	Dual-Port SRAM, 16KX8, 35ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC,
IDT7006S35J	IDT	获取价格	HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S35J8	IDT	获取价格	Dual-Port SRAM, 16KX8, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC,
IDT7006S35JB	IDT	获取价格	HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S35L68	ETC	获取价格	x8 Dual-Port SRAM
IDT7006S35PF	IDT	获取价格	HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S35PF8	IDT	获取价格	Dual-Port SRAM, 16KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64

与IDT7006S35G相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

23
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

48
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT7006S35G

IDT7006S35G 数据手册

与IDT7006S35G相关器件

与IDT7006S35G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IDT7006S35G

IDT7006S35G 数据手册

与IDT7006S35G相关器件

与IDT7006S35G相关文章

您还可以找

您在本页遇到什么问题？