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IDT6116SA20SOI PDF预览

IDT6116SA20SOI

更新时间: 2024-11-06 03:53:15
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 112K
描述
CMOS STATIC RAM 16K (2K x 8 BIT)

IDT6116SA20SOI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.300 INCH, SOIC-24
针数:24Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.23Is Samacsys:N
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G24JESD-609代码:e0
长度:15.4 mm内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:24字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP24,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified座面最大高度:2.65 mm
最大待机电流:0.002 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5 mm
Base Number Matches:1

IDT6116SA20SOI 数据手册

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CMOS Static RAM  
16K (2K x 8-Bit)  
IDT6116SA  
IDT6116LA  
Features  
Description  
The IDT6116SA/LA is a 16,384-bit high-speed static RAM  
organized as 2K x 8. It is fabricated using IDT's high-performance,  
high-reliabilityCMOStechnology.  
High-speed access and chip select times  
Military:20/25/35/45/55/70/90/120/150ns(max.)  
Industrial:20/25/35/45ns(max.)  
– Commercial:15/20/25/35/45ns(max.)  
Low-power consumption  
Battery backup operation  
– 2V data retention voltage (LA version only)  
Produced with advanced CMOS high-performance  
technology  
CMOS process virtually eliminates alpha particle soft-error consumesonly1µWto4µWoperatingoffa2Vbattery.  
Access times as fastas 15ns are available. The circuitalsooffers a  
reduced power standby mode. When CS goes HIGH, the circuit will  
automatically go to, and remain in, a standby power mode, as long  
as CS remains HIGH. This capability provides significant system level  
power and cooling savings. The low-power (LA) version also offers a  
battery backup data retention capability where the circuit typically  
rates  
AllinputsandoutputsoftheIDT6116SA/LAareTTL-compatible.Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
foroperation.  
TheIDT6116SA/LAispackagedin24-pin600and300milplasticor  
ceramicDIP,24-leadgull-wingSOIC,and24-leadJ-bendSOJproviding  
highboard-levelpackingdensities.  
Input and output directly TTL-compatible  
Static operation: no clocks or refresh required  
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,  
24-pin SOIC and 24-pin SOJ  
Military product compliant to MIL-STD-833, Class B  
Military grade product is manufactured in compliance to the latest  
version of MIL-STD-883, Class B, making it ideally suited to military  
temperatureapplicationsdemandingthehighestlevelofperformanceand  
reliability.  
FunctionalBlockDiagram  
A 0  
CC  
V
128 X 128  
MEMORY  
ARRAY  
ADDRESS  
DECODER  
GND  
A 10  
I/O 0  
I/O CONTROL  
INPUT  
DATA  
CIRCUIT  
I/O7  
,
CS  
CONTROL  
CIRCUIT  
OE  
WE  
3089 drw 01  
FEBRUARY 2001  
1
©2000IntegratedDeviceTechnology,Inc.  
DSC-3089/03  

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