Datasheet > IDP30E60

IDP30E60

更新时间： 2024-09-17 12:57:31

品牌	Logo	应用领域
THINKISEMI		二极管局域网快速恢复二极管
页数	文件大小	规格书
2页	2334K
描述
30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode

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中文翻译

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IDP30E60 数据手册

IDP30E60

Pb Free Plating Product

30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode

TO-220AC/TO-220CB-2P

APPLICATION

Cathode(Bottom Side Metal Heatsink)

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

Anode

PRODUCT FEATURE

· Ultrafast Recovery Time

Cathode

Internal Configuration

· Soft Recovery Characteristics

· Low Recovery Loss

Base Backside

· Low Forward Voltage

· High Surge Current Capability

· Low Leakage Current

GENERAL DESCRIPTION

IDP30E60 using lastest matured FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.

Absolute Maximum Ratings

Parameter

Symbol

Test Conditions

Values

Units

Repetitive peak reverse voltage

VRRM

600

Continuous forward current

IF(AV)

Tc =110°C

Single pulse forward current

Maximum repetitive forward current

Operating junction

IFSM

IFRM

240

Tc =25°C

Square wave, 20kHZ

175

°C

Storage temperatures

Tstg

-55 to +175

Electrical characteristics (Ta=25°Cunless otherwise specified)

Parameter

Breakdown voltage

Blocking voltage

Symbol

VBR,

Test Conditions

Min

Typ.

Max.

Units

600

IR=100µA

V_R

IF=30A

1.30

1.05

1.60

1.40

Forward voltage

(Per Diode)

IF=30A, Tj =125°C

VR= VRRM

Reverse leakage

current(Per Diode)

µA

200

Tj=150°C, VR=600V

I_F=0.5A, I_R=1A, I_RR=0.25A

Reverse recovery

time(Per Diode)

trr

I_F=1A,V_R=30V, di/dt =-200A/us

Thermal characteristics

Paramter

Symbol

Typ

1.6

Units

℃/W

Junction-to-Case

R_θJC

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http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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