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IDP30E120_09 PDF预览

IDP30E120_09

更新时间: 2024-11-18 05:39:07
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管开关
页数 文件大小 规格书
8页 578K
描述
Fast Switching Diode

IDP30E120_09 数据手册

 浏览型号IDP30E120_09的Datasheet PDF文件第2页浏览型号IDP30E120_09的Datasheet PDF文件第3页浏览型号IDP30E120_09的Datasheet PDF文件第4页浏览型号IDP30E120_09的Datasheet PDF文件第5页浏览型号IDP30E120_09的Datasheet PDF文件第6页浏览型号IDP30E120_09的Datasheet PDF文件第7页 
IDP30E120  
Fast Switching Diode  
Product Summary  
Features  
V
1200  
30  
V
A
V
RRM  
• 1200 V diode technology  
I
F
• Fast recovery  
V
T
1.65  
150  
F
• Soft switching  
°C  
jmax  
• Low reverse recovery charge  
• Low forward voltage  
PG-TO220-2  
• Easy paralleling  
• Pb-free lead plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
• Qualified according to JEDEC for target applications  
Type  
Package  
Ordering Code Marking Pin 1 PIN 2 PIN 3  
-
C
A
-
IDP30E120  
PG-TO220-2  
D30E120  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Repetitive peak reverse voltage  
Continous forward current  
Symbol  
Value  
1200  
Unit  
V
A
V
RRM  
I
F
T =25°C  
50  
30  
C
T =90°C  
C
Surge non repetitive forward current  
I
I
102  
FSM  
FRM  
T =25°C, t =10 ms, sine halfwave  
C
p
Maximum repetitive forward current  
76.5  
T =25°C, t limited by T  
, D=0.5  
C
p
jmax  
W
Power dissipation  
P
tot  
T =25°C  
138  
66  
C
T =90°C  
C
-55...+150  
260  
°C  
°C  
Operating and storage temperature  
T , T  
j stg  
S
Soldering temperature  
T
wavesoldering, 1.6mm (0.063 in.) from case for 10s  
Page 1  
Rev.2.3  
2009-08-19  

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