5秒后页面跳转
IDH15S120AKSA1 PDF预览

IDH15S120AKSA1

更新时间: 2024-11-27 21:12:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网二极管
页数 文件大小 规格书
6页 254K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-220AC, GREEN, PLASTIC, TO-220, 2 PIN

IDH15S120AKSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:8.56应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:78 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IDH15S120AKSA1 数据手册

 浏览型号IDH15S120AKSA1的Datasheet PDF文件第2页浏览型号IDH15S120AKSA1的Datasheet PDF文件第3页浏览型号IDH15S120AKSA1的Datasheet PDF文件第4页浏览型号IDH15S120AKSA1的Datasheet PDF文件第5页浏览型号IDH15S120AKSA1的Datasheet PDF文件第6页 
IDH15S120  
thinQ!TM SiC Schottky Diode  
Features  
Product Summary  
• Revolutionary semiconductor material - Silicon Carbide  
• Switching behavior benchmark  
VDC  
1200  
54
V
nC  
A
QC  
• No reverse recovery / No forward recovery  
• Temperature independent switching behavior  
• High surge current capability  
IF; TC< 130 °C  
15  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
PG-TO220-2  
• Optimized for high temperature operation  
• Lowest Figure of Merit QC/IF  
thinQ!TM Diode designed for fast switching applications like:  
• SMPS e.g.; CCM PFC  
• Motor Drives; Solar Applications; UPS  
Type  
Package  
Marking  
Pin 1  
Pin 2  
IDH15S120  
PG-TO220-2  
D15S120  
C
A
Maximum ratings  
Parameter  
Value  
15  
Symbol Conditions  
Unit  
I F  
T C<130 °C  
Continuous forward current  
A
I F,SM  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T C=25 °C, t p=10 µs  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T j=25 °C  
78  
Surge non-repetitive forward current,  
sine halfwave  
66  
I F,max  
Non-repetitive peak forward current  
300  
30  
i2dt  
A2s  
i²t value  
20  
VRRM  
dv/ dt  
Ptot  
Repetitive peak reverse voltage  
Diode dv/dt ruggedness  
1200  
50  
V
VR= 0….960 V  
V/ns  
W
T C=25 °C  
Power dissipation  
185  
-55 ... 175  
260  
T j, T stg  
Operating and storage temperature  
°C  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6mm (0.063 in.)  
from case for 10s  
T sold  
Mounting torque  
M3 and M3.5 screws  
60  
Mcm  
Rev. 2.0  
page 1  
2010-04-20  

IDH15S120AKSA1 替代型号

型号 品牌 替代类型 描述 数据表
IDH16G120C5XKSA1 INFINEON

类似代替

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO
GB20SLT12-247 GENESIC

功能相似

Silicon Carbide Power Schottky Diode

与IDH15S120AKSA1相关器件

型号 品牌 获取价格 描述 数据表
IDH16G120C5 INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO
IDH16G120C5XKSA1 INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-220AC, TO
IDH16G65C5 INFINEON

获取价格

650V SiC thinQ!™ Generation 5 diodes
IDH16G65C5_12 INFINEON

获取价格

ThinQ!™ Generation 5 represents Infineon le
IDH16G65C5XKSA1 INFINEON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 650V V(RRM), Silicon Carbide, TO-220AC
IDH16G65C6 INFINEON

获取价格

CoolSiC™ 肖特基二极管 650V G6是英飞凌先进的 SiC 肖特基势垒二极管技术
IDH-16LP-S3-TG 3M

获取价格

HEADER CONNECTOR,PCB MNT,RECEPT,16 CONTACTS,PIN,0.1 PITCH,PC TAIL TERMINAL,LATCH,BLACK
IDH-16LP-S3-TR 3M

获取价格

HEADER CONNECTOR,PCB MNT,RECEPT,16 CONTACTS,PIN,0.1 PITCH,PC TAIL TERMINAL,LATCH,BLACK
IDH-16LP-SR3-TG30 3M

获取价格

HEADER CONNECTOR,PCB MNT,RECEPT,16 CONTACTS,PIN,0.1 PITCH,PC TAIL TERMINAL,LATCH,BLACK
IDH-16PK-S3-TG 3M

获取价格

HEADER CONNECTOR,PCB MNT,RECEPT,16 CONTACTS,PIN,0.1 PITCH,PC TAIL TERMINAL,BLACK