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IDH16S60CAKSA1 PDF预览

IDH16S60CAKSA1

更新时间: 2024-11-24 14:51:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网二极管
页数 文件大小 规格书
7页 520K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 600V V(RRM), Silicon Carbide, TO-220, GREEN, PLASTIC PACKAGE-2

IDH16S60CAKSA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SFM
包装说明:GREEN, PLASTIC PACKAGE-2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-220
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:118 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IDH16S60CAKSA1 数据手册

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IDH16S60C  
2ndGeneration thinQ!TM SiC Schottky Diode  
Features  
Product Summary  
VDC  
Qc  
IF  
600  
38  
V
• Revolutionary semiconductor material - Silicon Carbide  
• Switching behavior benchmark  
nC  
A
16  
• No reverse recovery/ No forward recovery  
• No temperature influence on the switching behavior  
• High surge current capability  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Breakdown voltage tested at 5mA2)  
thinQ! 2G Diode specially designed for fast switching applications like:  
• CCM PFC  
• Motor Drives  
Type  
Package  
Marking  
Pin 1  
Pin 2  
IDH16S60C  
PG-TO220-2  
D16S60C  
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I F  
T C<140 °C  
f =50 Hz  
Continuous forward current  
RMS forward current  
16  
23  
A
I F,RMS  
Surge non-repetitive forward current,  
sine halfwave  
I F,SM  
T C=25 °C, t p=10 ms  
118  
64  
T j=150 °C,  
T C=100 °C, D =0.1  
I F,RM  
Repetitive peak forward current  
I F,max  
T C=25 °C, t p=10 µs  
T C=25 °C, t p=10 ms  
Non-repetitive peak forward current  
i²t value  
528  
69  
i2dt  
A2s  
V
VRRM  
Repetitive peak reverse voltage  
Diode dv/dt ruggedness  
Power dissipation  
600  
VR = 0….480V  
T C=25 °C  
dv/ dt  
Ptot  
50  
V/ns  
W
136  
T j, T stg  
Operating and storage temperature  
Mounting torque  
-55 ... 175  
60  
°C  
M3 and M3.5 screws  
Mcm  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6mm (0.063 in.)  
from case for 10s  
T sold  
260  
°C  
Rev. 2.1  
page 1  
2013-02-12  

IDH16S60CAKSA1 替代型号

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2ndGeneration thinQ!TM SiC Schottky Diode

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