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IDH12S60C PDF预览

IDH12S60C

更新时间: 2024-11-24 11:15:03
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管肖特基二极管局域网
页数 文件大小 规格书
7页 234K
描述
2ndGeneration thinQ!TM SiC Schottky Diode

IDH12S60C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.48
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:TO-220JESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:98 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:12 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IDH12S60C 数据手册

 浏览型号IDH12S60C的Datasheet PDF文件第2页浏览型号IDH12S60C的Datasheet PDF文件第3页浏览型号IDH12S60C的Datasheet PDF文件第4页浏览型号IDH12S60C的Datasheet PDF文件第5页浏览型号IDH12S60C的Datasheet PDF文件第6页浏览型号IDH12S60C的Datasheet PDF文件第7页 
IDH12S60C  
2ndGeneration thinQ!TM SiC Schottky Diode  
Features  
Product Summary  
V DC  
Q c  
I F  
600  
30  
V
• Revolutionary semiconductor material - Silicon Carbide  
• Switching behavior benchmark  
nC  
A
12  
• No reverse recovery/ No forward recovery  
• No temperature influence on the switching behavior  
• High surge current capability  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
• Breakdown voltage tested at 5mA2)  
thinQ! 2G Diode specially designed for fast switching applications like:  
• CCM PFC  
• Motor Drives  
Type  
Package  
Marking  
Pin 1  
Pin 2  
IDH12S60C  
PG-TO220-2  
D12S60C  
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I F  
T C<140 °C  
f =50 Hz  
Continuous forward current  
RMS forward current  
12  
18  
A
I F,RMS  
Surge non-repetitive forward current,  
sine halfwave  
I F,SM  
T C=25 °C, t p=10 ms  
98  
49  
T j=150 °C,  
T C=100 °C, D =0.1  
I F,RM  
Repetitive peak forward current  
I F,max  
T C=25 °C, t p=10 µs  
T C=25 °C, t p=10 ms  
Non-repetitive peak forward current  
i ²t value  
410  
48  
i 2dt  
A2s  
V
V RRM  
Repetitive peak reverse voltage  
Diode dv/dt ruggedness  
Power dissipation  
600  
V
R = 0….480V  
dv/ dt  
P tot  
50  
V/ns  
W
T C=25 °C  
115  
T j, T stg  
Operating and storage temperature  
Mounting torque  
-55 ... 175  
60  
°C  
M3 and M3.5 screws  
Mcm  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6mm (0.063 in.) from  
case for 10s  
T sold  
260  
°C  
Rev. 2.0  
page 1  
2010-04-27  

IDH12S60C 替代型号

型号 品牌 替代类型 描述 数据表
IDH08S60C INFINEON

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thinQ!TM SiC Schottky Diode

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