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IDH15S120 PDF预览

IDH15S120

更新时间: 2024-11-09 11:15:03
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
6页 248K
描述
thinQ!TM SiC Schottky Diode

IDH15S120 数据手册

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IDH15S120  
thinQ!TM SiC Schottky Diode  
Features  
Product Summary  
• Revolutionary semiconductor material - Silicon Carbide  
• Switching behavior benchmark  
VDC  
1200  
54
V
nC  
A
QC  
• No reverse recovery / No forward recovery  
• Temperature independent switching behavior  
• High surge current capability  
IF; TC< 130 °C  
15  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target applications  
PG-TO220-2  
• Optimized for high temperature operation  
• Lowest Figure of Merit QC/IF  
thinQ!TM Diode designed for fast switching applications like:  
• SMPS e.g.; CCM PFC  
• Motor Drives; Solar Applications; UPS  
Type  
Package  
Marking  
Pin 1  
Pin 2  
IDH15S120  
PG-TO220-2  
D15S120  
C
A
Maximum ratings  
Parameter  
Value  
15  
Symbol Conditions  
Unit  
I F  
T C<130 °C  
Continuous forward current  
A
I F,SM  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T C=25 °C, t p=10 µs  
T C=25 °C, t p=10 ms  
T C=150 °C, t p=10 ms  
T j=25 °C  
78  
Surge non-repetitive forward current,  
sine halfwave  
66  
I F,max  
Non-repetitive peak forward current  
300  
30  
i2dt  
A2s  
i²t value  
20  
VRRM  
dv/ dt  
Ptot  
Repetitive peak reverse voltage  
Diode dv/dt ruggedness  
1200  
50  
V
VR= 0….960 V  
V/ns  
W
T C=25 °C  
Power dissipation  
185  
-55 ... 175  
260  
T j, T stg  
Operating and storage temperature  
°C  
Soldering temperature,  
wavesoldering only allowed at leads  
1.6mm (0.063 in.)  
from case for 10s  
T sold  
Mounting torque  
M3 and M3.5 screws  
60  
Mcm  
Rev. 2.0  
page 1  
2010-04-20  

IDH15S120 替代型号

型号 品牌 替代类型 描述 数据表
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