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IC41LV16105-50KI PDF预览

IC41LV16105-50KI

更新时间: 2024-01-16 00:21:00
品牌 Logo 应用领域
矽成 - ICSI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
18页 188K
描述
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42,

IC41LV16105-50KI 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:0.400 INCH, SOJ-42Reach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J42JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:42
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ42,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
电源:3.3 V认证状态:Not Qualified
刷新周期:1024自我刷新:NO
最大待机电流:0.0005 A子类别:DRAMs
最大压摆率:0.16 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

IC41LV16105-50KI 数据手册

 浏览型号IC41LV16105-50KI的Datasheet PDF文件第1页浏览型号IC41LV16105-50KI的Datasheet PDF文件第2页浏览型号IC41LV16105-50KI的Datasheet PDF文件第4页浏览型号IC41LV16105-50KI的Datasheet PDF文件第5页浏览型号IC41LV16105-50KI的Datasheet PDF文件第6页浏览型号IC41LV16105-50KI的Datasheet PDF文件第7页 
IC41C16105  
IC41LV16105  
TRUTH TABLE  
ꢀunction  
RAS  
LCAS UCAS  
WE  
X
OE  
X
Address tR/tC I/O  
Standby  
H
L
L
H
L
L
H
L
X
High-Z  
Read: Word  
Read: Lower Byte  
H
L
ROW/COL  
ROW/COL  
DOUT  
H
H
L
Lower Byte, DOUT  
Upper Byte, High-Z  
Read: Upper Byte  
L
H
L
H
L
ROW/COL  
Lower Byte, High-Z  
Upper Byte, DOUT  
Write: Word (Early Write)  
L
L
L
L
L
L
L
X
X
ROW/COL  
ROW/COL  
DIN  
Write: Lower Byte (Early Write)  
H
Lower Byte, DIN  
Upper Byte, High-Z  
Write: Upper Byte (Early Write)  
Read-Write(1,2)  
L
L
H
L
L
L
L
X
ROW/COL  
ROW/COL  
Lower Byte, High-Z  
Upper Byte, DIN  
H
L
L
H
DOUT, DIN  
Hidden Refresh  
Read(2)  
Write(1,3)  
L
H
H
L
L
L
L
L
L
H
L
L
ROW/COL  
ROW/COL  
DOUT  
DOUT  
L  
X
RAS-Only Refresh  
CBR Refresh(4)  
L
H
L
H
L
X
X
X
X
ROW/NA  
X
High-Z  
High-Z  
HL  
Notes:  
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).  
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).  
3. EARLY WRITE only.  
4. At least one of the two CAS signals must be active (LCAS or UCAS).  
Integrated Circuit Solution Inc.  
DR014-0A 06/07/2001  
S2-3  

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