是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 0.400 INCH, SOJ-42 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | Is Samacsys: | N |
访问模式: | FAST PAGE | 最长访问时间: | 50 ns |
其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J42 | JESD-609代码: | e0 |
内存密度: | 16777216 bit | 内存集成电路类型: | FAST PAGE DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 42 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装等效代码: | SOJ42,.44 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 1024 | 自我刷新: | YES |
最大待机电流: | 0.0005 A | 子类别: | DRAMs |
最大压摆率: | 0.16 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IC41LV16105S-50T | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 | |
IC41LV16105S-50T | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IC41LV16105S-50TI | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IC41LV16105S-50TI | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, | |
IC41LV16105S-60K | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IC41LV16105S-60K | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | |
IC41LV16105S-60KI | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IC41LV16105S-60KI | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | |
IC41LV16105S-60T | ICSI |
获取价格 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
IC41LV16105S-60T | ISSI |
获取价格 |
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, |