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IBMN625405GT3B-7N PDF预览

IBMN625405GT3B-7N

更新时间: 2024-01-03 09:12:08
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
79页 1282K
描述
DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66

IBMN625405GT3B-7N 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:66
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.33
访问模式:FOUR BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G66
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:66字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX4封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:10.16 mm

IBMN625405GT3B-7N 数据手册

 浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第4页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第5页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第6页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第8页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第9页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第10页 
IBMN625404GT3B  
IBMN625804GT3B  
Preliminary  
256Mb Double Data Rate Synchronous DRAM  
Block Diagram (32Mb x 8)  
QFC  
generator  
CKE  
CK  
QFC  
(Optional)  
DRVR  
CK  
CS  
WE  
CAS  
RAS  
Bank3  
Bank2  
Bank1  
CK, CK  
DLL  
Mode  
Registers  
13  
8192  
Bank0  
Memory  
Array  
Data  
1
13  
15  
(8192 x 512 x 16)  
8
8
8
16  
Sense Amplifiers  
DQS  
Generator  
DQ0-DQ7,  
DM  
COL0  
Mask  
DQS  
Input  
Register  
1
I/O Gating  
DM Mask Logic  
16  
2
DQS  
1
A0-A12,  
BA0, BA1  
Write  
15  
1
8
FIFO  
1
1
&
16  
2
16  
2
512  
Drivers  
(x16)  
8
8
8
8
clk  
clk  
Column  
Decoder  
in  
out  
Data  
9
COL0  
CK,  
CK  
Column-Address  
Counter/Latch  
10  
COL0  
1
1
Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of  
the device; it does not represent an actual circuit implementation.  
Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-  
rectional DQ and DQS signals.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997B  
1/01  
Page 7 of 79  

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