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IBMN625405GT3B-7N PDF预览

IBMN625405GT3B-7N

更新时间: 2024-02-19 07:17:29
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
79页 1282K
描述
DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66

IBMN625405GT3B-7N 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:66
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.33
访问模式:FOUR BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G66
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:66字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX4封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:10.16 mm

IBMN625405GT3B-7N 数据手册

 浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第2页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第3页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第4页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第6页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第7页浏览型号IBMN625405GT3B-7N的Datasheet PDF文件第8页 
IBMN625404GT3B  
IBMN625804GT3B  
Preliminary  
256Mb Double Data Rate Synchronous DRAM  
DDR SDRAM Device Labeling Guide  
P/N code: aaabbccddefggh - jjj  
Meaning  
Applies to  
Definition  
Digit  
aaa  
Manufacturer  
All Devices IBM  
Product family/quality  
designator  
bb  
All Devices 06 = Industry Standard premium DDR SDRAM  
All Devices 25 = 256Mb, 13 row (4 bank devices only)  
cc  
Density & Addressing  
40 = x4  
Planar  
dd  
Data Width  
Devices  
80 = x8  
4 = 4 logical banks, does not support QFC\ function  
All Devices  
Number of logical banks  
and QFC\ support  
e
f
5 = 4 logical banks, includes QFC\ function  
Power (all devices sup-  
port self refresh mode)  
All Devices G = Standard Power, SSTL_2, V =V =2.5V  
dd  
ddq  
1st Digit:  
T = TSOP  
gg  
h
Package Type  
All Devices  
2nd Digit:  
3 = 400 mil package width  
Die Revision Code  
All Devices B = 1st shrink  
Part Speed Designator:  
1st and 2nd Digit: (2nd digit is dropped if representing x.0 ns)  
7 = Intended for 143MHz @CL=2.5  
75= Intended for 133MHz @ CL=2.5  
This is specified at the  
maximum clock fre-  
quency of the device.  
However, the same  
device will support  
8 = Intended for 125MHz @ CL=2.5  
jjj  
All Devices  
3rd Digit (represents CL/t  
/t for the specific clock cycle  
RCD RP  
defined by the 1st and 2nd digits above):  
N: CL=2.5, t = 3, t =3  
smaller CAS latencies  
for lower frequencies.  
RCD  
RP  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
29L0011.E36997B  
1/01  
Page 5 of 79  

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