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IBMN625405GT3B-7N PDF预览

IBMN625405GT3B-7N

更新时间: 2024-02-07 12:50:13
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
79页 1282K
描述
DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66

IBMN625405GT3B-7N 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:66
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.33
访问模式:FOUR BANK PAGE BURST最长访问时间:0.75 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G66
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:66字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX4封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:10.16 mm

IBMN625405GT3B-7N 数据手册

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