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IBM13M64734CCA-75AY PDF预览

IBM13M64734CCA-75AY

更新时间: 2024-10-29 20:09:11
品牌 Logo 应用领域
国际商业机器公司 - IBM 时钟动态存储器内存集成电路
页数 文件大小 规格书
20页 383K
描述
Synchronous DRAM Module, 64MX72, 5.65ns, CMOS, DIMM-168

IBM13M64734CCA-75AY 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:FOUR BANK PAGE BURST最长访问时间:5.65 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N168
内存密度:4831838208 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:168
字数:67108864 words字数代码:64000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64MX72
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:YES
最大待机电流:0.051 A子类别:DRAMs
最大压摆率:7.15 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

IBM13M64734CCA-75AY 数据手册

 浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第2页浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第3页浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第4页浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第5页浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第6页浏览型号IBM13M64734CCA-75AY的Datasheet PDF文件第7页 
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IBM13M64734CCA  
64M x 72 2-Bank Registered SDRAM Module  
Features  
• 168-Pin Registered 8-Byte Dual In-Line Memory  
Module  
• 64Mx72 Synchronous DRAM DIMM  
• Programmable operation:  
- DIMM CAS Latency: 4 (Registered mode);  
- Burst Type: Sequential or Interleave  
- Burst Length: 1, 2, 4, 8, and Full-Page  
- Operation: Burst Read and Write or Multiple  
Burst Read with Single Write  
-75A  
Reg.  
Units  
• Data Mask for Byte Read/Write control  
• Auto Refresh (CBR) and Self Refresh  
• Automatic and controlled Precharge commands  
• Suspend mode and Power Down mode  
• 12/11/2 Addressing (Row/Column/Bank)  
• 4096 refresh cycles distributed across 64ms  
• Card size: 5.25" x 1.70" x 0.320"  
• Gold contacts  
DIMM CAS Latency  
4
f
t
t
Clock Frequency  
Clock Cycle  
133  
7.5  
100  
10.0  
5.65  
MHz  
ns  
CK  
CK  
AC  
Clock Access Time  
5.65  
ns  
• Intended for 100MHz and 133MHz applications  
• Inputs and outputs are LVTTL (3.3V) compatible  
• Single 3.3V ± 0.3V power supply  
• DRAMs in TSOJ - 2 High Package  
• Serial Presence Detect with Write protect fea-  
ture  
• Single Pulsed RAS interface  
• SDRAMs have four internal banks  
• Module has two physical banks  
• Fully synchronous to positive clock edge  
Description  
IBM13M64734CCA is a registered 168-Pin Syn-  
chronous DRAM Dual In-Line Memory Module  
(DIMM) organized as a 64Mx72 high-speed memory  
array. The DIMM uses 18 64Mx4 SDRAMs in 400  
mil TSOJ stacked packages. The DIMM achieves  
high-speed data-transfer rates of 100MHz and  
133MHz by employing a prefetch/pipeline hybrid  
architecture that synchronizes the output data to a  
system clock.  
enable (CKE0) controls all devices on the DIMM,  
enabling the use of SDRAM Power Down modes;  
the stacked devices share a common CKE pin.  
Prior to any access operation, the device CAS  
latency and burst type/length/operation type must  
be programmed into the DIMM by address inputs  
A0-A13 using the mode register set cycle. The  
DIMM CAS latency when operated in Registered  
mode is one clock later than the device CAS latency  
due to the address and control signals being  
clocked to the SDRAM devices.  
The DIMM is intended for use in applications operat-  
ing at 100Mhz and 133MHz memory bus speeds. All  
control and address signals are re-driven through  
registers/buffers to the SDRAM devices. Operating  
in registered mode (REGE pin tied high), the con-  
trol/address input signals are latched in the register  
on one rising clock edge and sent to the SDRAM  
devices on the following rising clock edge (data  
access is delayed by one clock).  
The DIMM uses serial presence detects imple-  
mented via a serial EEPROM using the two-pin IIC  
protocol. The first 128 bytes of serial PD data are  
programmed and locked by the DIMM manufac-  
turer. The last 128 bytes are available to the cus-  
tomer and may be write protected by providing a  
high level to pin 81 on the DIMM. An on-board pull-  
down resistor keeps this in the Write Enable mode.  
A phase-lock loop (PLL) on the DIMM is used to re-  
drive the clock signals to both the SDRAM devices  
and the registers to minimize system clock loading.  
(CK0 is connected to the PLL, and CK1, CK2, and  
CK3 are terminated on the DIMM). A single clock  
All IBM 168-pin DIMMs provide a high-performance,  
flexible 8-byte interface in a 5.25" long space-saving  
footprint.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
19L7317.E92596  
8/99  
Page 1 of 20  

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