Datasheet > IBM11N4735CB-50J

IBM11N4735CB-50J

更新时间： 2024-10-27 23:57:39

品牌	Logo	应用领域
其他 - ETC		内存集成电路动态存储器
页数	文件大小	规格书
31页	452K
描述
x72 EDO Page Mode DRAM Module

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中文翻译

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数据手册

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IBM11N4735CB-50J 数据手册

Discontinued (9/98 - last order; 3/99 last ship)

IBM11M4730C4M

x 72 E12/10, 5.0V, Au.

IBM11N4645BB IBM11N4735BB

IBM11N4645CB IBM11N4735CB

4M x 64/72 DRAM Module

Features

• 168 Pin JEDEC Standard, Unbuffered 8 Byte

Dual In-line Memory Module

• System Performance Beneﬁts:

-Non buffered for increased performance

• 4Mx64, 4Mx72 Extended Data Out Page Mode

DIMMS

-Reduced noise (35 V /V pins)

SS CC

-Byte write, byte read accesses

-Serial PDs

• Performance:

-50

-60

• Extended Data Out (EDO) Mode, Read-Modify-

Write Cycles

t_RAC

t_CAC

t_AA

RAS Access Time

CAS Access Time

50ns

13ns

60ns

15ns

30ns

• Refresh Modes: RAS-Only, CBR and Hidden

Refresh

Access Time From Address 25ns

t_RC

Cycle Time

84ns 104ns

20ns 25ns

t_HPC

EDO Mode Cycle Time

• 2048 refresh cycles distributed across 32ms

(11/11 addressing)

• Inputs and outputs are LVTTL (3.3V) compatible

• 4096 refresh cycles distributed across 64ms

(12/10 addressing)

• Single 3.3V ± 0.3V Power Supply

• Au contacts

• 11/11 or 12/10 addressing (Row/Column)

• Card size: 5.25" x 1.0" x 0.354"

• DRAMS in SOJ Package

• Optimized for byte-write non-parity, or ECC

applications

Description

IBM11N4645BB/IBM11N4645CB are industry stan-

dard 168-pin 8-byte Dual In-line Memory Modules

(DIMMs) which are organized as 4Mx64 and 4Mx72

high speed memory arrays designed with EDO

DRAMs for non-parity or ECC applications. The

DIMMs use 16 (x64) or 18 (x72) 4Mx4 EDO DRAMs

in SOJ packages. The use of EDO DRAMs allows

for a reduction in Page Mode Cycle time from 40ns

(Fast Page) to 20ns for 50ns DRAM modules.

clock data between the master (system logic) and

the slave EEPROM device (DIMM). The EEPROM

device address pins (SA0-2) are brought out to the

DIMM tabs to allow 8 unique DIMM/EEPROM

addresses. The first 128 bytes are utilized by the

DIMM manufacturer and the second 128 bytes of

serial PD data are available to the customer.

All IBM 168-pin DIMMs provide a high performance,

flexible 8-byte interface in a 5.25” long space-saving

footprint. Related products include the buffered

DIMMs (x64 non- parity and x72 ECC Optmized) for

applications which can benefit from the on-card buff-

ers.

The DIMMs use serial presence detects imple-

mented via a serial EEPROM using the two pin I C

protocol. This communication protocol uses Clock

(SCL) and Data I/O (SDA) lines to synchronously

Card Outline

(Front)

(Back)

10 11

94 95

168

40 41

124 125

Use is further subject to the provisions at the end of this document.

50H8036.E22441E

Revised 5/98

Page 1 of 31

12 3 4 5 6 7...31

中文翻译

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与IBM11N4735CB-50J相关器件

型号	品牌	获取价格	描述	数据表
IBM11N4735CB-60	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N4735CB-60J	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N4735CB-70	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N4735CB-70J	ETC	获取价格	x72 EDO Page Mode DRAM Module
IBM11N4845CB-6RJ	IBM	获取价格	EDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168
IBM11N8645BB-60	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N8645BB-70	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N8645CB-60	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N8645CB-70	ETC	获取价格	x64 EDO Page Mode DRAM Module
IBM11N8645HB-50T	IBM	获取价格	EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168

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