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IBM11N4845CB-6RJ PDF预览

IBM11N4845CB-6RJ

更新时间： 2024-10-28 14:42:43
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器内存集成电路
页数 文件大小 规格书
29页 330K
描述
EDO DRAM Module, 4MX72, 60ns, CMOS, DIMM-168

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IBM11N4845CB-6RJ 技术参数

生命周期：Obsolete零件包装代码：DIMM
包装说明：,针数：168
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.28风险等级：5.84
Is Samacsys：N访问模式：FAST PAGE WITH EDO
最长访问时间：60 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码：R-XDMA-N168内存密度：301989888 bit
内存集成电路类型：EDO DRAM MODULE内存宽度：72
功能数量：1端口数量：1
端子数量：168字数：4194304 words
字数代码：4000000工作模式：ASYNCHRONOUS
组织：4MX72输出特性：3-STATE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY认证状态：Not Qualified
刷新周期：4096最大供电电压 (Vsup)：3.45 V
最小供电电压 (Vsup)：3.15 V标称供电电压 (Vsup)：3.3 V
表面贴装：NO技术：CMOS
端子形式：NO LEAD端子位置：DUAL
Base Number Matches：1

IBM11N4845CB-6RJ 数据手册

 浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第2页浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第3页浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第4页浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第5页浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第6页浏览型号IBM11N4845CB-6RJ的Datasheet PDF文件第7页 
IBM11M4730C4M  
x 72 E12/10, 5.0V, Au.  
IBM11N4845BB  
IBM11N4845CB  
Preliminary  
Features  
4M x 72 Super EOS Module  
• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual  
In-line Memory Module  
• System Performance Benefits:  
-Non buffered for increased performance  
-Reduced noise (35 V /V pins)  
• 4Mx72 Extended Data Out Page Mode DIMMS  
• Performance:  
SS CC  
-Serial PDs  
-6R  
• Extended Data Out (EDO) Mode, Read-Modify-Write  
Cycles  
tRAC  
tCAC  
tAA  
RAS Access Time  
CAS Access Time  
Access Time From Address  
Cycle Time  
60ns  
18ns  
30ns  
104ns  
25ns  
• Refresh Modes: RAS-Only, CBR and Hidden Refresh  
• 2048 refresh cycles distributed across 32ms (11/11  
addressing)  
tRC  
tHPC  
EDO Mode Cycle Time  
• 4096 refresh cycles distributed across 64ms (12/10  
addressing)  
• All inputs and outputs are LVTTL (3.3V) compatible  
• Single 3.3V ± 0.15V Power Supply  
• 11/11 or 12/10 addressing (Row/Column)  
• Card size: 5.25" x 1.2" x 0.354"  
• DRAMS in SOJ Package  
• Au contacts  
• Optimized for ECC applications  
• Provides Chip-Kill (ECC) protection transparently to  
an existing Single Error Correction (SEC) system  
Description  
The IBM11N4845BB and IBM11N4845CB are industry  
standard 168-pin 8-byte Dual In-line Memory Modules  
(DIMMs) which are organized as a 4Mx72 high speed  
memory array supporting EDO applications. The DIMM  
uses 18 4Mx4 EDO DRAMs in SOJ packages along with  
an ASIC and check bit DRAMs to provide an SEC ECC  
system with transparent chip kill protection.  
master (system logic) and the slave EEPROM device  
(DIMM). The EEPROM device address pins (SA0-2) are  
brought out to the DIMM tabs to allow 8 unique  
DIMM/EEPROM addresses. The first 128 bytes are uti-  
lized by the DIMM manufacturer and the second 128  
bytes of serial PD data are available to the customer.  
All IBM 168-pin DIMMs provide a high performance, flexi-  
ble 8-byte interface in a 5.25” long space-saving footprint.  
Related products include the buffered DIMMs (x64, x72  
parity and x72 ECC Optmized) for applications which can  
benefit from the on-card buffers.  
The DIMMs use serial presence detects implemented via  
a serial EEPROM using the two pin I2C protocol. This  
communication protocol uses Clock (SCL) and Data I/O  
(SDA) lines to synchronously clock data between the  
Card Outline  
(Front)  
(Back)  
1
85  
10 11  
94 95  
84  
168  
40 41  
124 125  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H5485  
GA14-4640-00  
Revised 11/96  
Page 1 of 28  
1234567...29

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