Datasheet > HY62U8200B

HY62U8200B

更新时间： 2024-10-31 23:13:31

品牌	Logo	应用领域
海力士 - HYNIX		静态存储器
页数	文件大小	规格书
12页	188K
描述
256K x8 bit 3.0V Low Power CMOS slow SRAM

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HY62U8200B 数据手册

HY62U8200B Series

256Kx8bit CMOS SRAM

Document Title

256K x8 bit 3.0V Low Power CMOS slow SRAM

Revision History

Revision No History

Draft Date

Remark

Final

Initial Revision History Insert

Revised

Jul.29.2000

- Improved operating current

Icc1 : 60mA => 30mA

Change the Notch Location of sTSOP

- Left-Top => Left-Center

Sep.04.2000

Dec.04.2000

Final

Marking Information Add

Revised

- AC Test Condition Add : 5pF Test Load

- VIH max : Vcc + 0.2V => Vcc + 0.3V

Changed Logo

Apr.30.2001

Final

HYUNDAI -> hynix

Marking Information Change

This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

for use of circuits described. No patent licenses are implied.

Rev 06 / Apr. 2001

Hynix Semiconductor

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
HY62U8200B-E	HYNIX	获取价格	256K x8 bit 3.0V Low Power CMOS slow SRAM
HY62U8200B-I	HYNIX	获取价格	256K x8 bit 3.0V Low Power CMOS slow SRAM
HY62U8200BLLR1-70I	HYNIX	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
HY62U8200BLLR1-85	HYNIX	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
HY62U8200BLLR1-85E	HYNIX	获取价格	暂无描述
HY62U8200BLLR1-85I	HYNIX	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
HY62U8200BLLR1-I-70	HYNIX	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, REVERSE, TSOP1-32
HY62U8200BLLSR-10E	HYNIX	获取价格	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32
HY62U8200BLLSR-10I	HYNIX	获取价格	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32
HY62U8200BLLSR-70	HYNIX	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, STSOP1-32