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HY62CT08081E-DTI PDF预览

HY62CT08081E-DTI

更新时间: 2024-11-11 22:40:23
品牌 Logo 应用领域
海力士 - HYNIX 存储静态存储器
页数 文件大小 规格书
12页 185K
描述
32Kx8bit CMOS SRAM

HY62CT08081E-DTI 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Base Number Matches:1

HY62CT08081E-DTI 数据手册

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HY62CT08081E Series  
32Kx8bit CMOS SRAM  
Document Title  
32K x8 bit 5.0V Low Power Slow SRAM  
Revision History  
Revision No History  
Draft Date  
Remark  
00  
01  
Initial  
Nov.01.2000  
Dec.05.2000  
Preliminary  
Preliminary  
Marking Information Add  
Revised  
-
-
DC / AC Characteristics  
AC Test Condition Add : 5pF Test Load  
02  
Revised  
Feb.13.2001  
Final  
-
-
Remove L-Part  
Change LL-Part Isb1 Limit @E.T/I.T  
: 15uA => 20uA  
03  
04  
Revised  
Feb.21.2001  
Apr.30.2001  
Final  
Final  
-
Marking Information Change : SOP Type  
Changed Logo  
-
-
HYUNDAI -> hynix  
Marking Information Change  
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility  
for use of circuits described. No patent licenses are implied.  
Rev 04 / Apr. 2001  
Hynix Semiconductor  

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