5秒后页面跳转
HY62EF16200LLM-10I PDF预览

HY62EF16200LLM-10I

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器
页数 文件大小 规格书
13页 194K
描述
Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48

HY62EF16200LLM-10I 数据手册

 浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第2页浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第3页浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第4页浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第5页浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第6页浏览型号HY62EF16200LLM-10I的Datasheet PDF文件第7页 
Y62UF16200/ HY62QF16200/ HY62EF16200/  
HY62SF16200 Series 128Kx16bit full CMOS SRAM  
DESCRIPTION  
FEATURES  
·
·
·
Fully static operation and Tri-state output  
TTL compatible inputs and outputs  
Battery backup(LL/SL-part)  
- 1.5V(min) data retention  
Standard pin configuration  
- 48ball uBGA  
The  
HY62UF16200  
/
HY62QF16200  
/
HY62EF16200 / HY62SF16200 is a high speed,  
super low power and 2M bit full CMOS SRAM  
organized as 131,072 words by 16bits. The  
HY62UF16200 / HY62QF16200 / HY62EF16200 /  
HY62SF16200 uses high performance full CMOS  
process technology and is designed for high  
speed and low power circuit technology. It is  
particularly well-suited for the high density low  
power system application. This device has a data  
retention mode that guarantees data to remain  
valid at a minimum power supply voltage of 1.5V.  
·
Product  
No.  
Voltage  
(V)  
Speed  
(ns)  
Operation  
Current(mA)  
Standby Current(uA)  
Temperature  
(°C)  
LL  
10  
10  
10  
10  
10  
10  
10  
10  
SL  
2
2
2
2
2
2
2
2
HY62UF16200  
HY62UF16200-I  
HY62QF16200  
HY62QF16200-I  
HY62EF16200  
HY62EF16200-I  
HY62SF16200  
HY62SF16200-I  
3.0  
3.0  
2.5  
2.5  
2.0  
2.0  
1.8  
1.8  
70/85/100  
70/85/100  
85/100/120  
85/100/120  
100/120/150  
100/120/150  
120/150/200  
120/150/200  
15  
15  
10  
10  
10  
10  
10  
10  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
0~70(Normal)  
-40~85(E.T.)  
Note 1. E.T. : Extended Temperature, Normal : Normal Temperature  
2. Current value is max.  
PIN CONNECTION (Top View )  
BLOCK DIAGRAM  
ROW  
DECODER  
A0  
/LB /OE A0 A1 A2 NC  
IO9 /UB A3 A4 /CS IO1  
IO10 IO11 A5 A6 IO2 IO3  
Vss IO12 NC A7 IO4 Vcc  
Vcc IO13 NC A16 IO5 Vss  
IO15 IO14 A14 A15 IO6 IO7  
IO16 NC A12 A13 /WE IO8  
NC A8 A9 A10 A11 NC  
I/O1  
I/O8  
I/O9  
MEMORY ARRAY  
1024x128x16  
I/O16  
A16  
/CS  
/OE  
/LB  
/UB  
/WE  
PIN DESCRIPTION  
Pin Name  
/CS  
/WE  
/OE  
/LB  
Pin Funtion  
Chip Select  
Write Enable  
Output Enable  
Low Byte Control(I/O1~I/O8)  
Pin Name  
I/O1~I/O16  
A0~A16  
Vcc  
Pin Funtion  
Data Input/Output  
Address Input  
Power(3.0V/2.5V/2.0V/1.8V)  
Ground  
Vss  
/UB  
Upper Byte Control(I/O9~I/O16) NC  
No Connection  
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.02 /Feb.99  
Hyundai Semiconductor  

与HY62EF16200LLM-10I相关器件

型号 品牌 获取价格 描述 数据表
HY62EF16200LLM-15I HYNIX

获取价格

Standard SRAM, 128KX16, 150ns, CMOS, PBGA48, MICRO, BGA-48
HY62EF16200SLM-10 HYNIX

获取价格

Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48
HY62EF16200SLM-10I HYNIX

获取价格

Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, BGA-48
HY62EF16200SLM-15I HYNIX

获取价格

Standard SRAM, 128KX16, 150ns, CMOS, PBGA48, MICRO, BGA-48
HY62EF16201ALLM-10 HYNIX

获取价格

Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, CSP, BGA-48
HY62EF16201ALLM-10I HYNIX

获取价格

Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, CSP, BGA-48
HY62EF16201ALLM-12 HYNIX

获取价格

Standard SRAM, 128KX16, 120ns, CMOS, PBGA48, MICRO, CSP, BGA-48
HY62EF16201ALLM-85I HYNIX

获取价格

Standard SRAM, 128KX16, 85ns, CMOS, PBGA48, MICRO, CSP, BGA-48
HY62EF16201ASLM-10 HYNIX

获取价格

Standard SRAM, 128KX16, 100ns, CMOS, PBGA48, MICRO, CSP, BGA-48
HY62EF16201ASLM-12 HYNIX

获取价格

Standard SRAM, 128KX16, 120ns, CMOS, PBGA48, MICRO, CSP, BGA-48