5秒后页面跳转
HY5V72DSM-P PDF预览

HY5V72DSM-P

更新时间: 2024-02-19 17:02:30
品牌 Logo 应用领域
海力士 - HYNIX 动态存储器内存集成电路
页数 文件大小 规格书
13页 284K
描述
Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90

HY5V72DSM-P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:LFBGA,
针数:90Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.92访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B90长度:13 mm
内存密度:536870912 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX32
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.4 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11 mmBase Number Matches:1

HY5V72DSM-P 数据手册

 浏览型号HY5V72DSM-P的Datasheet PDF文件第4页浏览型号HY5V72DSM-P的Datasheet PDF文件第5页浏览型号HY5V72DSM-P的Datasheet PDF文件第6页浏览型号HY5V72DSM-P的Datasheet PDF文件第8页浏览型号HY5V72DSM-P的Datasheet PDF文件第9页浏览型号HY5V72DSM-P的Datasheet PDF文件第10页 
Preliminary  
HY5V72D(L/S)M(P) Series  
4Banks x 4M x 32bits Synchronous DRAM  
ABSOLUTE MAXIMUM RATING  
Parameter  
Symbol  
Rating  
Unit  
oC  
Ambient Temperature  
TA  
0 ~ 70  
oC  
V
V
V
mA  
W
Storage Temperature  
TSTG  
VIN, VOUT  
VDD  
-55 ~ 125  
-1.0 ~ 4.6  
-1.0 ~ 4.6  
-1.0 ~ 4.6  
50  
Voltage on Any Pin relative to VSS  
Voltage on VDD relative to VSS  
Voltage on VDDQ relative to VSS  
Short Circuit Output Current  
Power Dissipation  
VDDQ  
IOS  
PD  
1
Soldering Temperature . Time  
260 . 10  
oC . Sec  
TSOLDER  
o
DC OPERATING CONDITION (TA= 0 to 70 C )  
Parameter  
Power Supply Voltage  
Input High Voltage  
Input Low Voltage  
Symbol  
VDD, VDDQ  
VIH  
Min  
3.0  
2.0  
Typ  
3.3  
3.3  
-
Max  
Unit  
Note  
1
1, 2  
1, 3  
3.6  
VDDQ+0.3  
0.8  
V
V
V
VIL  
-0.3  
Note : 1. All voltages are referenced to VSS = 0V  
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.  
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration  
o
AC OPERATING TEST CONDITION (TA= 0 to 70 C, VDD=3.3±0.3V, VSS=0V)  
Parameter  
AC Input High/Low Level Voltage  
Input Timing Measurement Reference Level Voltage  
Input Rise/Fall Time  
Output Timing Measurement Reference Level Voltage  
Output Load Capacitance for Access Time Measurement  
Symbol  
VIH / VIL  
Vtrip  
Value  
2.4/0.4  
1.4  
1
1.4  
Unit  
V
V
ns  
V
pF  
Note  
tR / tF  
Voutref  
CL  
50  
1
Vtt=1.4V  
Note :  
RT=250 Ω  
Output  
Output  
50pF  
50pF  
DC Output Load Circuit  
AC Output Load Circuit  
Rev. 0.2 / May. 2004  
7

与HY5V72DSM-P相关器件

型号 品牌 描述 获取价格 数据表
HY5V72DSMP-H HYNIX Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, LEAD FREE, FBGA-90

获取价格

HY5W26CF-B ETC x16 SDRAM

获取价格

HY5W26CF-H ETC SDRAM|4X2MX16|CMOS|BGA|54PIN|PLASTIC

获取价格

HY5W26CF-HF HYNIX Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

获取价格

HY5W26CF-P HYNIX Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

获取价格

HY5W26CF-PF HYNIX Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54

获取价格