Datasheet > HVP12-B

HVP12-B

更新时间： 2024-09-18 21:12:55

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
5页	488K
描述
Rectifier Diode, 1 Element, 1A, 12V V(RRM),

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中文翻译

获取价格

技术参数
数据手册

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HVP12-B 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.74
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	18 V	最大非重复峰值正向电流：	50 A
元件数量：	1	最高工作温度：	120 °C
最大输出电流：	1 A	最大重复峰值反向电压：	12 V
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

HVP12-B 数据手册

HVP12

THRU

HVP20

HIGH VOLTAGE ASSEMBLIED RECTIFIER

VOLTAGE RANGE 12000 to 20000 Volts CURRENT 1 Amperes

FEATURES

* Low cost

* Low leakage

* Isolated case

* Surge overload rating - 50 amperes peak

* Mounting position: Any

* Low forward voltage drop

MECHANICAL DATA

* Epoxy: Device has UL flammability classification 94V-O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in millimeters

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

RATINGS

SYMBOL

HVP12

HVP20

UNITS

K Volts

HVP14

HVP15

HVP16

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

10.5

8.4

9.8

11.2

Maximum DC Blocking Voltage

VDC

Maximum Average Forward Rectified Current at TA

= 50^oC

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

FSM

I²T

A²S

⁰C

Typical Current Square Time

10.4

1.7

STG

-40 to + 120

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (At TA

= 25^oC unless otherwise noted)

CHARACTERISTICS

Maximum Instantaneous Forward Voltage at 1 A DC

Maximum DC Reverse Current

SYMBOL

HVP12

18.0

HVP20

22.0

UNITS

Volts

HVP14

21.0

HVP15

23.0

HVP16

24.0

@T_A= 25^o

2.0

5.0

uAmps

^oC

at Rated DC Blocking Voltage

@T_A

= 80 C/100

2013-05

NOTES: Enough heat sink must be considered in application.

REV:

12 3 4 5

中文翻译

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