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HUFA75645P3_NL

更新时间: 2024-11-06 13:08:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关局域网
页数 文件大小 规格书
10页 238K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

HUFA75645P3_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):310 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

HUFA75645P3_NL 数据手册

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HUFA75645P3, HUFA75645S3S  
Data Sheet  
December 2001  
75A, 100V, 0.014 Ohm, N-Channel,  
UltraFET® Power MOSFETs  
Packaging  
JEDEC TO-220AB  
JEDEC TO-263AB  
Features  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
• Ultra Low On-Resistance  
- r  
DS(ON)  
= 0.014Ω, V = 10V  
GS  
GATE  
• Simulation Models  
SOURCE  
- Temperature Compensated PSPICE® and SABER™  
Electrical Models  
DRAIN  
- Spice and Saber Thermal Impedance Models  
- www.fairchild.com  
(FLANGE)  
HUFA75645P3  
HUFA75645S3S  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Symbol  
D
S
Ordering Information  
PART NUMBER  
HUFA75645P3  
PACKAGE  
TO-220AB  
TO-263AB  
BRAND  
75645P  
75645S  
G
HUFA75645S3S  
NOTE: When ordering, use the entire part number. Add the suffix T  
to obtain the variant in tape and reel, e.g., HUFA75645S3ST.  
o
Absolute Maximum Ratings  
T
= 25 C, Unless Otherwise Specified  
C
HUFA75645P3, HUFA75645S3S  
UNITS  
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
100  
100  
20  
V
V
V
DSS  
DGR  
Drain to Gate Voltage (R  
= 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
Drain Current  
o
Continuous (T = 25 C, V  
C
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
75  
65  
A
A
GS  
D
D
o
Continuous (T = 100 C, V  
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
GS  
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
Figure 4  
DM  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Figures 6, 14, 15  
310  
2.07  
W
W/ C  
D
o
o
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
J
-55 to 175  
C
STG  
Maximum Temperature for Soldering  
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
o
o
300  
260  
C
C
L
pkg  
NOTES:  
1. T = 25 C to 150 C.  
o
o
J
CAUTION: Stresses above those listed in “Absol24ute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy  
of the requirements, see AEC Q101 at: http://www.aecouncil.com/  
Reliability data can be found at: http://www.mtp.fairchild.com/automotive.html.  
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.  
©2001 Fairchild Semiconductor Corporation  
HUFA75645P3, HUFA75645S3S Rev. B  

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