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HT23C010(28DIP) PDF预览

HT23C010(28DIP)

更新时间: 2024-11-12 21:07:03
品牌 Logo 应用领域
台湾合泰/盛群 - HOLTEK 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
17页 144K
描述
MASK ROM, 128KX8, 250ns, CMOS, PDIP28

HT23C010(28DIP) 技术参数

生命周期:Obsolete包装说明:DIP, DIP28,.6
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:250 nsJESD-30 代码:R-PDIP-T28
内存密度:1048576 bit内存集成电路类型:MASK ROM
内存宽度:8端子数量:28
字数:131072 words字数代码:128000
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP28,.6
封装形状:RECTANGULAR封装形式:IN-LINE
电源:3/5 V认证状态:Not Qualified
最大待机电流:0.0015 A子类别:MASK ROMs
最大压摆率:0.025 mA表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

HT23C010(28DIP) 数据手册

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HT23C010  
CMOS 128K´8-Bit Mask ROM  
Features  
·
·
Operating voltage: 2.7V~5.5V  
131072´8-bit of mask ROM  
·
·
Low power consumption  
Mask options: chip enable CE/CE/OE1/OE1 and  
output enable OE/OE/NC  
-
Operation: 25mA max. (VCC=5V)  
·
10mA max. (VCC=3V)  
TTL compatible inputs and outputs  
-
Standby: 30mA max. (VCC=5V)  
·
Tristate outputs  
10mA max. (VCC=3V)  
·
Fully static operation  
·
Access time: 150ns max. (VCC=5V)  
·
28-pin DIP/SOP package  
250ns max. (VCC=3V)  
32-pin DIP/SOP/PLCC package  
General Description  
The HT23C010 is a read-only memory with high perfor-  
mance CMOS storage device whose 1024K of memory  
is arranged into 131072 words by 8 bits.  
tion in multiple bus microprocessor systems. An addi-  
tional feature of the HT23C010 is its ability to enter the  
standby mode whenever the chip enable (CE/CE) is in-  
active, thus reducing current consumption to below  
30mA. The combination of these functions makes the  
chip suitable for high density low power memory appli-  
cations.  
For application flexibility, the chip enable and output en-  
able control pins can be selected as active high or active  
low. This flexibility not only allows easy interface with  
most microprocessors, but also eliminates bus conten-  
Block Diagram  
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Rev. 1.20  
1
December 9, 2003  

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