Datasheet > HT23C040H

HT23C040H

更新时间： 2024-01-29 11:24:45

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
9页	111K
描述
CMOS 512K?8-Bit High Speed Mask ROM

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中文翻译

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技术参数
数据手册

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HT23C040H 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

HT23C040H 数据手册

HT23C040H

CMOS 512K´8-Bit High Speed Mask ROM

Features

Operating voltage: 2.7V~5.5V

512K´8-bit of mask ROM

Low power consumption

Mask option: chip enable CE/CE, and output enable

OE/OE/NC

Operation: 25mA max. (V_CC=5V)

10mA max. (V_CC=3V)

TTL compatible inputs and outputs

Standby: 60mA max. (V_CC=5V)

Tristate outputs

20mA max. (V_CC=3V)

Fully static operation

Access time: 90ns max. (V_CC=5V)

32-pin DIP/SOP package

250ns max. (V_CC=3V)

General Description

The HT23C040H is a read-only memory with high per-

formance CMOS storage device whose 4096K of mem-

ory is arranged into 512K word by 8 bits.

tion in multiple bus microprocessor systems. An addi-

tional feature of the HT23C040H is its ability to enter the

standby mode whenever the chip enable (CE/CE) is in-

active, thus reducing current consumption to below

60mA. The combination of these functions makes the

chip suitable for high density low power memory appli-

cations.

For application flexibility, the chip enable and output en-

able control pins can be selected as active high or active

low. This flexibility not only allows easy interface with

most microprocessors, but also eliminates bus conten-

Block Diagram

(

)

Rev. 1.00

August 15, 2002

12 3 4 5 6 7...9

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