Datasheet > HT23C512_1

HT23C512_1

更新时间： 2024-11-12 03:42:55

品牌	Logo	应用领域
台湾合泰/盛群 - HOLTEK		/
页数	文件大小	规格书
12页	121K
描述
CMOS 64Kx8-Bit Mask ROM

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数据手册

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HT23C512_1 数据手册

HT23C512

CMOS 64K´8-Bit Mask ROM

Features

Operating voltage: 2.7V~5.5V

65536´8-bit of mask ROM

Low power consumption

Mask options: chip enable CE/CE/OE1/OE1 and

output enable OE/OE/NC

Operation: 25mA max. (V_CC=5V)

10mA max. (V_CC=3V)

TTL compatible inputs and outputs

Standby: 30mA max. (V_CC=5V)

Tristate outputs

10mA max. (V_CC=3V)

Fully static operation

Access time: 150ns max. (V_CC=5V)

28-pin DIP/SOP package

250ns max. (V_CC=3V)

General Description

The HT23C512 is a read-only memory with high perfor-

mance CMOS storage device whose 512K of memory is

arranged into 65536 words by 8 bits.

tion in multiple bus microprocessor systems. An addi-

tional feature of the HT23C512 is its ability to enter the

standby mode whenever the chip enable (CE/CE) is in-

active, thus reducing current consumption to below

30mA. The combination of these functions makes the

chip suitable for high density low power memory appli-

cations.

For application flexibility, the chip enable and output en-

able control pins can be selected as active high or active

low. This flexibility not only allows easy interface with

most microprocessors, but also eliminates bus conten-

Block Diagram

(

)

Rev. 1.10

August 30, 2002

12 3 4 5 6 7...12

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